Issue 43, 2009

Electrical transport properties of In-doped Ce1−xInxO2−δ (x = 0.1; 0.2)

Abstract

We report the synthesis and electrical conductivity of fluorite-type Ce1−xInxO2-δ (x = 0.1; 0.2) in air, dry Ar, N2 and H2 in the temperature range of 300–800 °C. We have employed a new CO2 capture technique to prepare the “metastable” fluorite-related structure Ce1−xInxO2-δ from the corresponding In-doped Ba-containing perovskite of the nominal chemical formula BaCe1−xInxO3−δ at 800 °C. The amount of CO2 gained per ceramic gram was found to be consistent with the formation of BaCO3, confirming the complete leaching of Ba in BaCe1−xInxO3−δ. The CO2 capture efficiency was found to be in the range of 90–99% at 800 °C, which is significantly higher than those of well-known low-temperature CO2 absorbing materials, including Li2O, Li6Zr2O7, Li1.8Na0.2ZrO3 and LiNaZrO3. Powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDAX) confirmed the perovskite into fluorite structural transformation reaction. The AC impedance study showed a clear intercept to the real axis at the low-frequency over the investigated temperatures in all the atmospheres, indicating a non-blocking nature of electrode (Pt) and electrolyte interface. The constant phase element (CPE) value was found to be in the order of 10−10 F in air, N2 and Ar for high-frequency part of the semicircle due to bulk contribution, and about two orders of magnitude lower values were observed for the low-frequency semicircle which may correspond to grain-boundary effect. The 20 mol% In-doped CeO2 exhibits a total electrical conductivity of about 4 × 10−6 S/cm at 600 °C in Ar, while in H2 an about four orders of magnitude higher electrical conductivity of 3 × 10−2 S/cm was observed. The activation energy for electrical conductivity was found to be 1.36 eV in Ar, 1.43 eV in N2, 1.34 eV in H2, and 1.1 eV in air for Ce0.8In0.2O1.9.

Graphical abstract: Electrical transport properties of In-doped Ce1−xInxO2−δ (x = 0.1; 0.2)

Supplementary files

Article information

Article type
Paper
Submitted
26 May 2009
Accepted
21 Aug 2009
First published
18 Sep 2009

Dalton Trans., 2009, 9520-9528

Electrical transport properties of In-doped Ce1−xInxO2−δ (x = 0.1; 0.2)

S. S. Bhella, L. M. Kuti, Q. Li and V. Thangadurai, Dalton Trans., 2009, 9520 DOI: 10.1039/B910335J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements