Issue 37, 2009
From the journal:

Physical Chemistry Chemical Physics

Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

William C. Chueha  and  Sossina M. Haile*a  

* Corresponding authors

a Department of Materials Science, California Institute of Technology, Pasadena, USA
E-mail: smhaile@caltech.edu

Abstract

Small polaron carrier density in epitaxial, doped CeO2 thin films under low oxygen partial pressure was determined from electrochemically-measured capacitance after accounting for interfacial effects and shown to agree well with bulk values.

Graphical abstract: Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

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Article information

DOI
https://doi.org/10.1039/B910903J
Article type
Communication
Submitted
03 Jun 2009
Accepted
14 Jul 2009
First published
27 Jul 2009

Phys. Chem. Chem. Phys., 2009,11, 8144-8148

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Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

W. C. Chueh and S. M. Haile, Phys. Chem. Chem. Phys., 2009, 11, 8144 DOI: 10.1039/B910903J

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