Jump to main content
Jump to site search

Issue 37, 2009
Previous Article Next Article

Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

Author affiliations

Abstract

Small polaron carrier density in epitaxial, doped CeO2 thin films under low oxygen partial pressure was determined from electrochemically-measured capacitance after accounting for interfacial effects and shown to agree well with bulk values.

Graphical abstract: Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

Back to tab navigation

Article information


Submitted
03 Jun 2009
Accepted
14 Jul 2009
First published
27 Jul 2009

Phys. Chem. Chem. Phys., 2009,11, 8144-8148
Article type
Communication

Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

W. C. Chueh and S. M. Haile, Phys. Chem. Chem. Phys., 2009, 11, 8144
DOI: 10.1039/B910903J

Social activity

Search articles by author

Spotlight

Advertisements