Energetic and electronic properties of X- (Si, Ge, Sn, Pb) doped TiO2 from first-principles
Abstract
First-principles density functional theory calculations were performed on the electronic properties of substitutional Si, Ge, Sn, and Pb-doped
* Corresponding authors
a School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
First-principles density functional theory calculations were performed on the electronic properties of substitutional Si, Ge, Sn, and Pb-doped
R. Long, Y. Dai, G. Meng and B. Huang, Phys. Chem. Chem. Phys., 2009, 11, 8165 DOI: 10.1039/B903298C
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