Issue 30, 2009

Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors

Abstract

We report a single-step, solution-based synthesis even at room temperature utilizing a facile sonochemical method to fabricate ZnO nanocrystalline films consisting of well-aligned nanorods.

Graphical abstract: Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors

Supplementary files

Article information

Article type
Communication
Submitted
24 Apr 2009
Accepted
02 Jun 2009
First published
18 Jun 2009

Chem. Commun., 2009, 4545-4547

Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors

J. Oh, J. Park, S. Kang, C. Hwang and H. Shim, Chem. Commun., 2009, 4545 DOI: 10.1039/B908219K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements