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Issue 7, 2009
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Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes

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Abstract

A combined experimental and theoretical investigation has clarified the nanometre-scale vapour-phase epitaxial growth of ZnO nanostructures on different crystal planes of GaN substrates. Under typical growth conditions, ZnO nanorods grow perpendicular to the GaN(0001) plane, but thin flat films form on GaN(10[1 with combining macron]1), (10[1 with combining macron]0) and (11[2 with combining macron]0). High-resolution X-ray diffraction data and transmission electron microscopy confirm the heteroepitaxial relationship between the ZnO nanostructures and GaN substrates. These results are consistent with first-principles theoretical calculations, indicating that the ZnO surface morphologies are mainly influenced by highly anisotropic GaN/ZnO interface energies. As a result of the large surface energy gradients, different ZnO nanostructures grow by preferential heteroepitaxial growth on different facets of regular GaN micropattern arrays. High-resolution transmission electron microscopy shows that ZnO nanotubes develop epitaxially on micropyramid tips, presumably as a result of enhanced nucleation and growth about the edges.

Graphical abstract: Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes

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Article information


Submitted
16 Sep 2008
Accepted
06 Nov 2008
First published
06 Jan 2009

J. Mater. Chem., 2009,19, 941-947
Article type
Paper

Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes

Y. J. Hong, J. Yoo, Y. Doh, S. H. Kang, K. Kong, M. Kim, D. R. Lee, K. H. Oh and G. Yi, J. Mater. Chem., 2009, 19, 941
DOI: 10.1039/B816034A

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