Rutherford backscattering spectrometry characterization of nanoporous chalcogenide thin films grown at oblique angles†
Abstract
GeSbSe
chalcogenide thin films deposited by
* Corresponding authors
a Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, USA
b Centro de Microanálisis de Materiales (CMAM), Campus de Cantoblanco, Cantoblanco, Madrid, Spain
c ISOM and Dpto. de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Madrid, Spain
d Instituto de Ciencia de Materiales de Madrid, Campus de Cantoblanco, Madrid, Spain
GeSbSe
chalcogenide thin films deposited by
R. J. Martín-Palma, A. Redondo-Cubero, R. Gago, J. V. Ryan and C. G. Pantano, J. Anal. At. Spectrom., 2008, 23, 981 DOI: 10.1039/B716815B
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