Issue 29, 2008
From the journal:

Chemical Communications

Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment†

Zhiyong Wang,a   Lu Wang,b   Zujin Shi,*a   Jing Lu,*b   Zhennan Gua  and  Zhengxiang Gaob  

* Corresponding authors

a Beijing National Laboratory for Molecular Sciences, State Key Lab of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, PR China
E-mail: zjshi@pku.edu.cn
Fax: 86-10-62751708
Tel: 86-10-62751495

b State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing, PR China
E-mail: jinglu@pku.edu.cn
Fax: 86-10-62751615
Tel: 86-10-62756393

Abstract

We present a simple approach of tuning the hole doping level of iodine-doped single-walled carbon nanotubes by adjusting temperature, utilizing the structural conversion of iodine species encapsulated in SWNTs.

Graphical abstract: Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment

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Article information

DOI
https://doi.org/10.1039/B804964E
Article type
Communication
Submitted
25 Mar 2008
Accepted
23 Apr 2008
First published
23 May 2008

Chem. Commun., 2008, 3429-3431

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Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment

Z. Wang, L. Wang, Z. Shi, J. Lu, Z. Gu and Z. Gao, Chem. Commun., 2008, 3429 DOI: 10.1039/B804964E

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