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Issue 37, 2008
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Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping

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Abstract

Tungsten trioxide (WO3) films doped with 0.25 atom% tellurium synthesised by a sol–gel route, show strong transient photocurrents under chopped sub-bandgap illumination ( = 1.8 eV < Eg) at low bias potentials from 0.2 to 0.7 V; such effects are ascribed to the presence of a localized narrow band (NB) between the VB and the CB in this material.

Graphical abstract: Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping

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Article information


Submitted
06 May 2008
Accepted
10 Jun 2008
First published
29 Jul 2008

Chem. Commun., 2008, 4454-4456
Article type
Communication

Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping

B. Yang and V. Luca, Chem. Commun., 2008, 4454
DOI: 10.1039/B807629D

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