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Issue 10, 2007
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The single molecular precursor approach to metal telluride thin films: imino-bis(diisopropylphosphine tellurides) as examples

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Abstract

Interest in metal telluride thin films as components in electronic devices has grown recently. This tutorial review describes the use of single-source precursors for the preparation of metal telluride materials by aerosol-assisted chemical vapour deposition (AACVD) and acquaints the reader with the basic techniques of materials characterization. The challenges in the design and synthesis of suitable precursors are discussed, focusing on metal complexes of the recently-developed imino-bis(diisopropylphosphine telluride) ligand. The generation of thin films and nanoplates of CdTe, Sb2Te3 and In2Te3 from these precursors are used as illustrative examples.

Graphical abstract: The single molecular precursor approach to metal telluride thin films: imino-bis(diisopropylphosphine tellurides) as examples

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Article information


Submitted
20 Apr 2007
First published
27 Jun 2007

Chem. Soc. Rev., 2007,36, 1622-1631
Article type
Tutorial Review

The single molecular precursor approach to metal telluride thin films: imino-bis(diisopropylphosphine tellurides) as examples

J. S. Ritch, T. Chivers, M. Afzaal and P. O'Brien, Chem. Soc. Rev., 2007, 36, 1622
DOI: 10.1039/B605535B

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