La2S3 thin films from metal organic chemical vapor deposition of single-source precursor

Abstract

Thin films of lanthanum sulfide (La₂S₃) have been prepared from [La(bipy)(S₂CNEt₂)₃] by using metal organic chemical vapor deposition (MOCVD) on different substrates. The preparative parameters, such as substrate temperature and the nature of substrates, are optimized to get well-defined cubic phase (γ) lanthanum sulfide thin films. The optimized films are characterized by means of X-ray powder diffraction (XRPD) techniques, scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and in-situ X-ray photoelectron spectroscopy (XPS).