Mixed amide–malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO2 thin films

A. Milanov; R. Bhakta; R. Thomas; P. Ehrhart; M. Winter; R. Waser; A. Devi

doi:10.1039/B509380E

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Mixed amide–malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO₂ thin films†

A. Milanov,^a R. Bhakta,^a R. Thomas,^b P. Ehrhart,^b M. Winter,^a R. Waser^b and A. Devi*^a

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* Corresponding authors

^a Inorganic Materials Chemistry, Lehrstuhl für Anorganische Chemie II, Ruhr-University Bochum, Bochum, Germany
E-mail: anjana.devi@rub.de

^b IFF-Institut für Festkörperforschung and CNI-Center for Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich, Jülich, Germany

Abstract

The concept of introducing malonates as chelating ligands in combination with metal amides has yielded a new class of compounds which enable growth of HfO₂ thin films at low deposition temperatures by liquid injection metalorganic chemical vapour deposition.

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Article information

DOI: https://doi.org/10.1039/B509380E
Article type: Communication
Submitted: 06 Jul 2005
Accepted: 02 Dec 2005
First published: 15 Dec 2005

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J. Mater. Chem., 2006,16, 437-440

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Mixed amide–malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO₂ thin films

A. Milanov, R. Bhakta, R. Thomas, P. Ehrhart, M. Winter, R. Waser and A. Devi, J. Mater. Chem., 2006, 16, 437 DOI: 10.1039/B509380E

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Journal of Materials Chemistry