Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water
Abstract
HfO2 thin films have been deposited onto p-Si(100) substrates by
* Corresponding authors
a
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P. O. Box 6100, FIN-02015 Espoo, Finland
E-mail:
Jaakko.Niinisto@hut.fi
b Department of Chemistry, Georgetown University, 37th and O Streets, N. W., 20057 Washington DC, USA
c Department of Chemistry, University of Helsinki, P. O. Box 55, FIN-00014 University of Helsinki, Finland
d Accelerator Laboratory, University of Helsinki, P. O. Box 43, FIN-00014 University of Helsinki, Finland
HfO2 thin films have been deposited onto p-Si(100) substrates by
J. Niinistö, M. Putkonen, L. Niinistö, S. L. Stoll, K. Kukli, T. Sajavaara, M. Ritala and M. Leskelä, J. Mater. Chem., 2005, 15, 2271 DOI: 10.1039/B417866C
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