Interlayer stacking disorder in zeolite beta family: a Raman spectroscopic study

Abstract

Raman spectroscopy has been applied to series of BEA- and BEC-type samples differing from each other in size, Si/Al ratio and polymorph percentage in order to analyse the effect of interlayer stacking arrangements on the vibrational modes of zeolite beta. The Raman peaks observed in the spectral range 250–550 cm⁻¹ were assigned to the rings building the basic (001)-layer and to those linking the adjacent layers in zeolite beta. It is shown that the intensity ratio ρ between the Raman signals at 314 and 343 cm⁻¹ is most sensitive to the degree of periodicity faults along the c direction. A larger value of ρ indicates a larger size of polymorph stacking sequence, i.e. improvement of the stacking faultlessness. The interlayer stacking disorder and the degree of connectivity point defects are higher in nanosized zeolite beta than in micron-sized crystals. The Al content influences the concentration of defected SiOH groups, but is less important for the interlayer stacking sequences in colloidal zeolite beta.