Jump to main content
Jump to site search

Issue 31, 2005
Previous Article Next Article

GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls

Author affiliations

Abstract

Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 °C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 °C, while maintaining dimensional integrity.

Graphical abstract: GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls

Back to tab navigation

Article information


Submitted
12 May 2005
Accepted
09 Jun 2005
First published
11 Jul 2005

Chem. Commun., 2005, 3995-3997
Article type
Communication

GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls

U. K. Gautam, S. R. C. Vivekchand, A. Govindaraj and C. N. R. Rao, Chem. Commun., 2005, 3995
DOI: 10.1039/B506676J

Social activity

Search articles by author

Spotlight

Advertisements