Vertically well aligned P-doped ZnO nanowires synthesized on ZnO–Ga/glass templates
Abstract
Vertically well aligned P-doped ZnO
* Corresponding authors
a
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan (Republic of China)
E-mail:
changsj@mail.ncku.edu.tw
Fax: (+886)-6-2671854
Tel: (+886)-6-275-7575 ext. 6239
b
Materials Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan (Republic of China)
E-mail:
EugeneChen@itri.org.tw
Fax: (+886) 3-5820386
Tel: (+886) 3-5915332
Vertically well aligned P-doped ZnO
C. Hsu, S. Chang, Y. Lin, S. Tsai and I. Chen, Chem. Commun., 2005, 3571 DOI: 10.1039/B504881H
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