Issue 21, 2004
From the journal:

Journal of Materials Chemistry

Some recent developments in the MOCVD and ALD of high-κ dielectric oxides†

Anthony C. Jones,‡*a   Helen C. Aspinall,a   Paul R. Chalker,b   Richard J. Potter,b   Kaupo Kukli,c   Antti Rahtu,c   Mikko Ritalac  and  Markku Leskeläc  

* Corresponding authors

a Department of Chemistry, University of Liverpool, Liverpool, UK
E-mail: tjconsultancy@btconnect.com

b Department of Materials Science and Engineering, University of Liverpool, Liverpool, UK

c Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014, Finland

Abstract

A range of high-permittivity (κ) dielectric oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub-0.1 μm CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of these high-κ dielectric oxides. Some recent developments in precursors for the MOCVD and ALD of ZrO2, HfO2, Zr- and Hf-silicate and the rare earth oxides M2O3 (M = Pr, La, Gd, Nd) are discussed.

Graphical abstract: Some recent developments in the MOCVD and ALD of high-κ dielectric oxides

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Article information

DOI
https://doi.org/10.1039/B405525J
Article type
Feature Article
Submitted
13 Apr 2004
Accepted
25 Jun 2004

J. Mater. Chem., 2004,14, 3101-3112

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Some recent developments in the MOCVD and ALD of high-κ dielectric oxides

A. C. Jones, H. C. Aspinall, P. R. Chalker, R. J. Potter, K. Kukli, A. Rahtu, M. Ritala and M. Leskelä, J. Mater. Chem., 2004, 14, 3101 DOI: 10.1039/B405525J

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