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Issue 9, 2004
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Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

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Abstract

n-Channel OFETs using oligoselenophene- and oligothiophene-based semiconductors as active layers have been successfully fabricated, and the field-effect mobilities for the selenophene-based compounds are found to be higher than those for the thiophene analogues.

Graphical abstract: Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

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Article information


Submitted
26 Jan 2004
Accepted
23 Mar 2004
First published
06 Apr 2004

J. Mater. Chem., 2004,14, 1367-1369
Article type
Communication

Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

Y. Kunugi, K. Takimiya, Y. Toyoshima, K. Yamashita, Y. Aso and T. Otsubo, J. Mater. Chem., 2004, 14, 1367
DOI: 10.1039/B401209G

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