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Issue 12, 2003
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Atmospheric pressure chemical vapour deposition of Cr2−xTixO3 (CTO) thin films (≤3 µm) on to gas sensing substrates

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Abstract

Atmospheric pressure chemical vapour deposition (APCVD) of CrO2Cl2 and TiCl4 as precursors in the presence of an oxygen source (oxygen, water, ethyl acetate, methanol, ethanol) results in the simple, reproducible and rapid preparation of thin (≤3 µm) Cr2−xTixO3Cly films (x = 0.01, 0.05, 0.10, 0.16, 0.4; y = 0.1−0.3) on prefabricated sensor substrates. Annealing of films at 600 °C for 1 h under a flow of 5% H2 in N2 led to single phase Cr2−xTixO3 films (x = 0.01, 0.05, 0.10, 0.16, 0.4). Use of Ti(OPri)4 instead of TiCl4 gave a change in thin-film stoichiometry and microstructure for similar reaction conditions. The synthesis affords a high throughput route to substrate adherent layers with controlled microstructure and stoichiometry. Film characterisation was carried out using SEM, Raman spectroscopy, EDXA, XPS and the determination of the activation energy of conductance. The gas sensor response of the Cr2−xTixO3 films to ethanol is reported.

Graphical abstract: Atmospheric pressure chemical vapour deposition of Cr2−xTixO3 (CTO) thin films (≤3 µm) on to gas sensing substrates

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Article information


Submitted
24 Jul 2003
Accepted
17 Sep 2003
First published
15 Oct 2003

J. Mater. Chem., 2003,13, 2957-2962
Article type
Paper

Atmospheric pressure chemical vapour deposition of Cr2−xTixO3 (CTO) thin films (≤3 µm) on to gas sensing substrates

G. A. Shaw, I. P. Parkin and D. E. Williams, J. Mater. Chem., 2003, 13, 2957
DOI: 10.1039/B308683F

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