Tetrathiafulvalene-based conducting deposits on silicon substrates
Abstract
Tetrathiafulvalene-based molecular conductors, namely [TTF][TCNQ], (TTF)6[N(C2H5)4](HPM12O40)
(M = W, Mo), and TTF[Ni(dmit)2]2 have been processed as thin films on microrough (001)-oriented silicon substrates using three different techniques. CVD-grown [TTF][TCNQ] deposits consist of platelets (10 × 5 µm) and filaments (diameter ∼1 µm). CN stretching modes in the infrared spectrum and CC stretching modes in the Raman spectrum are in agreement with a charge transfer of ∼0.6 from the TTF donor to the TCNQ acceptor. The N(1s)