Issue 8, 2003
From the journal:

Journal of Materials Chemistry

The deposition of thin films of CuME2 by CVD techniques (M = In, Ga and E = S, Se)

Jin-Ho Park,a   Mohammad Afzaal,a   Michael Kemmler,a   Paul O'Brien,*a   David J. Otway,b   Jim Rafterya  and  John Watersa  

* Corresponding authors

a The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK
E-mail: paul.obrien@man.ac.uk, jin-ho.park@man.ac.uk
Fax: 0161-275-4616
Tel: 0161-275-4652

b Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, UK

Abstract

Thin film(s) of chalcopyrite CuME2 (where M = In or Ga; E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) or aerosol-assisted chemical vapour deposition (AACVD) using the precursors M(E2CNMenHex)3 and Cu(E2CNMenHex)2. Films were grown on various substrates between 350–500 °C and characterized by X-ray diffraction, XPS, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Graphical abstract: The deposition of thin films of CuME2 by CVD techniques (M = In, Ga and E = S, Se)

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Article information

DOI
https://doi.org/10.1039/B302896H
Article type
Paper
Submitted
13 Mar 2003
Accepted
01 May 2003
First published
25 Jun 2003

J. Mater. Chem., 2003,13, 1942-1949

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The deposition of thin films of CuME2 by CVD techniques (M = In, Ga and E = S, Se)

J. Park, M. Afzaal, M. Kemmler, P. O'Brien, D. J. Otway, J. Raftery and J. Waters, J. Mater. Chem., 2003, 13, 1942 DOI: 10.1039/B302896H

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