GaAs in GaSb: a new type of heterostructure emitting at 2 μm wavelength

A. A. Toropov; V. A. Solov'ev; B. Ya. Mel'tser; Ya. V. Terent'ev; R. N. Kyutt; A. N. Semenov; S. V. Ivanov; P. S. Kop'ev; Motlan; E. M. Goldys

doi:10.1039/B104183P

A. A. Toropov,^a V. A. Solov'ev,^a B. Ya. Mel'tser,^a Ya. V. Terent'ev,^a R. N. Kyutt,^a A. N. Semenov,^a S. V. Ivanov,^a P. S. Kop'ev,^a Motlan^b and E. M. Goldys^b

Author affiliations

^a Ioffe Institute, St Petersburg, Russia

^b Division of Information and Communication Sciences, Macquarie University, North Ryde, Australia

Abstract

We report growth as well as optical and structural studies of a new type of a GaAs/GaSb heterostructure, with 1–3 monolayer thick GaAs layers embedded within unstrained GaSb. In such structures the GaAs layer is under tensile stress, in contrast to the situation in which self-organized growth of quantum dots is commonly observed. The structure emits light in the 2 μm wavelength range. The emission characteristics are explained by a combination of quantum confinement effects and localization on nanoscale potential fluctuations.

Journal of Materials Chemistry

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GaAs in GaSb: a new type of heterostructure emitting at 2 μm wavelength

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