Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height
Abstract
The barrier height ΦB of electrochemically formed n-GaAs/Au Schottky barriers is investigated as a function of deposition potential VD . Two potential regions can be distinguished: one in which ΦB is comparable to the value of the contacts made by