IR detection of NO2 using p+ porous silicon as a high sensitivity sensor

Abstract

Mesoporous silicon doped with 3.0 × 10¹⁹ B atoms cm⁻³ (p⁺-type) is an insulating material which dramatically increases its electrical conductivity when exposed to traces of gaseous NO₂; nitrogen dioxide chemisorption at the surface generates carriers, the population of which is readily evaluated through the intensity of IR absorption.