Insights into the chemical vapor deposition of GaN using the single-source precursor Me2N(CH2)3Ga(N3)2: matrix isolation of Ga(N3)
Abstract
The investigation of the pyrolysis of the single-source
precursor
Me2N(CH2)3Ga(N3)2 1
by matrix-isolation
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Article information
- Article type
- Communication
- Submitted
- 02 Mar 2001
- Accepted
- 17 Apr 2001
- First published
- 01 May 2001
Chem. Commun., 2001, 911-912
Permissions
Insights into the chemical vapor deposition of GaN
using the single-source precursor
Me2N(CH2)3Ga(N3)2:
J. Müller and S. Bendix, Chem. Commun., 2001, 911 DOI: 10.1039/B101987M
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