Abstract
Fluorine-doped indium oxide films are of interest as a transparent conducting material. Polycrystalline indium oxide films were deposited at 400–550 °C in a low-pressure chemical vapor deposition process from In[OCMe(CF3)2]3(H2N-t-Bu) and O2 precursors. The films deposited at ≤500 °C contained 2–3 atom% fluorine while the film deposited at 550 °C had no detectable fluorine incorporation (by