SCHEDULED MAINTENANCE:
A new vapor-phase deposition method using FeCl3 and CH3CSNH2 as starting materials has been examined for the growth of FeS2 films on glass substrates under atmospheric pressure. The X-ray diffractogram of the as-deposited films at 773 K showed a typical cubic pyrite pattern. The growth rate was approximately 8.4 µm h−1 at 773 K. The resulting films have a carrier concentration of 6.5 × 1018 cm−3 and a Hall mobility of 20 cm2 V−1 s−1 at 298 K.
Preparation of pyrite thin films by atmospheric pressure chemical vapor deposition using FeCl3 and CH3CSNH2
N. Takahashi, T. Sawada, T. Nakamura and T. Nakamura, J. Mater. Chem., 2000, 10, 2346 DOI: 10.1039/B003015P
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