Issue 10, 1999
From the journal:

Journal of Materials Chemistry

Formation of hydrogenated Si2O films by UV laser photolysis of disiloxane

Josef Pola,   Markéta Urbanová,   Zdeněk Bastl,   Jan Šubrt  and  Helmut Beckers  

Abstract

ArF laser-induced photolysis of disiloxane in the gas phase results in the cleavage of the Si–H bonds and affords chemical vapour deposition of novel hydrogenated silicon suboxide films. The films are sensitive to ambient atmosphere and were characterised by FTIR and XP spectroscopy and by SEM.

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Article information

DOI
https://doi.org/10.1039/A903998H
Article type
Paper

J. Mater. Chem., 1999,9, 2429-2431

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Formation of hydrogenated Si2O films by UV laser photolysis of disiloxane

J. Pola, M. Urbanová, Z. Bastl, J. Šubrt and H. Beckers, J. Mater. Chem., 1999, 9, 2429 DOI: 10.1039/A903998H

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