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Issue 9, 1999
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Molecular rectification with M|(D-σ-A LB film)|M junctions

Abstract

Molecular materials of the form electron donor-sigma-bridge-electron acceptor (D-σ-A) have been synthesized and incorporated into non-centrosymmetric Langmuir-Blodgett (LB) multilayer structures. Electrical characterization has been performed using a metal|(Z-type LB film)|metal (M|LB|M) junction construction. Current density-voltage data demonstrate striking rectification behaviour. Computational modelling of the electronic structure of the material has been carried out using a first principles, density functional approach. Possible conduction mechanisms are discussed with reference to the results of this modelling.

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Article information


J. Mater. Chem., 1999,9, 2271-2275
Article type
Paper

Molecular rectification with M|(D-σ-A LB film)|M junctions

A. C. Brady, B. Hodder, A. Scott Martin, J. Roy Sambles, C. P. Ewels, R. Jones, P. R. Briddon, A. M. Musa, C. A. Panetta and D. L. Mattern, J. Mater. Chem., 1999, 9, 2271
DOI: 10.1039/A902107H

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