Effect of doping metals on the kinetics of interaction of SnO2 thin films with oxygen
Abstract
The effect of changing the doping metal (M=Cu, Ni, Pd, Pt) on the kinetics of oxygen exchange reactions of polycrystalline SnO2 thin films with gaseous oxygen was studied in situ by conductance measurements. It was found that preliminary annealing of SnO2-based materials in inert (N2) and active (100 ppm H2S in N2) atmospheres affects the kinetics of their reaction with oxygen. Two kinetic models describing the interactions of semiconducting porous materials with gases, i.e., diffusion and surface chemical reactions, are considered.