Issue 9, 1996

Thin film deposition of GexCyHz by radiolysis of GeH4–C3H8 mixtures

Abstract

Amorphous hydrogenated films of germanium carbides have been prepared by radiolysis of GeH4–C3H8 mixtures in the 430–570 K temperature range. Ge/C ratios range from 0.67 to 76 and Ge/H ratios from 0.22 to 10.8 according to the deposition temperature and the gas-phase composition. The corresponding bandgaps range from 1.58 to 1.04 eV. The effect of sp2 and sp3 carbon is discussed.

Article information

Article type
Paper

J. Mater. Chem., 1996,6, 1507-1509

Thin film deposition of GexCyHz by radiolysis of GeH4–C3H8 mixtures

P. Benzi, M. Castiglioni, E. Truffa and P. Volpe, J. Mater. Chem., 1996, 6, 1507 DOI: 10.1039/JM9960601507

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