Thin film deposition of GexCyHz by radiolysis of GeH4–C3H8 mixtures
Abstract
Amorphous hydrogenated films of germanium carbides have been prepared by radiolysis of GeH4–C3H8 mixtures in the 430–570 K temperature range. Ge/C ratios range from 0.67 to 76 and Ge/H ratios from 0.22 to 10.8 according to the deposition temperature and the gas-phase composition. The corresponding bandgaps range from 1.58 to 1.04 eV. The effect of sp2 and sp3 carbon is discussed.