Temperature dependence of Hall mobility in a single crystal of the organic semiconductor BTQBT

Abstract

The Hall mobility of a BTQBT [bis(1, 2, 5-thiadiazolo)-p-quinobis(1,3-dithiole)] single crystal was found to be 2.4 cm² V^–1 s^–1 at 330 K and 6.3 cm² V^–1 s^–1 at 175 K. It changed with temperature as T^–16 in the range 175–330 K, which corresponds to the T^–1.5 temperature dependence theoretically predicted for the mobility determined by lattice scattering. The sign of the carrier was determined to be positive over the whole temperature range, which indicates that electrical conduction is dominated by hole carriers.