Direct evidence for the formation of a passivating layer during chemomechanical polishing of silica by a hydrogen difluoride-based reagent
Abstract
The sparingly soluble material (the passivating layer) formed during chemomechanical polishing of silica wafers by [HF2]––cerium(IV) oxide–sucrose mixtures at low pH has been identified as K2SiF6 coated with a thin silica layer.