4-Methyl-1,2,3-selenadiazole: a liquid selenium source for the low-temperature chemical vapour deposition of selenium-containing materials

Abstract

The use of 4-methyl-1,2,3-selenadiazole as a precursor for the chemical vapour deposition of selenium-containing materials has been investigated. The results indicate that this is a useful precursor for the low-temperature plasma-assisted chemical vapour deposition of selenium, with a growth rate of 500 Å min^–1 being achieved with a substrate temperature of 40 °C and a plasma power density of 1 W cm^–2.