Predominant defects in semiconductor isovalent solid solutions: Pb1 –y(SexTe1 –x)y, Pb1 –y(SxTe1 –x)y and Pb1 –y(SxSe1 –x)y

Abstract

Isovalent ternary solid solutions of A^IVB^VI materials such as Pb_{1 –y}(S_xSe_{1 –x})_y, Pb_{1 –y}(S_xTe_{1 –x})_y, and Pb_{1 –y}(Se_xTe_{1 –x})_y can been used as lattice-matched heterostructures for IR lasers and detectors. The solid/vapour equilibrium has been studied by the method of rapid quenching of crystals of solid solutions prepared by three-zone furnace annealing at fixed T, P_Pb and P_PbX. Hall-coefficient and lattice-constant measurements on quenched samples were analysed as functions of T and P_Pb. The curves of n, p as functions of T and P_Pb were used to determine the degree of ionization of defects and to calculate the constants of Frenkel disordering in the form: K=K⁰ exp(–ΔH/k_BT).