Predominant defects in semiconductor isovalent solid solutions: Pb1 –y(SexTe1 –x)y, Pb1 –y(SxTe1 –x)y and Pb1 –y(SxSe1 –x)y
Abstract
Isovalent ternary solid solutions of AIVBVI materials such as Pb1 –y(SxSe1 –x)y, Pb1 –y(SxTe1 –x)y, and Pb1 –y(SexTe1 –x)y can been used as lattice-matched heterostructures for IR lasers and detectors. The solid/vapour equilibrium has been studied by the method of rapid quenching of crystals of solid solutions prepared by three-zone furnace annealing at fixed T, PPb and PPbX. Hall-coefficient and lattice-constant measurements on quenched samples were analysed as functions of T and PPb. The curves of n, p as functions of T and PPb were used to determine the degree of ionization of defects and to calculate the constants of Frenkel disordering in the form: K=K0 exp(–ΔH/kBT).