Emission spectroscopy of the plasma decomposition of silicon tetrachloride
Abstract
A study is described of the effects of plasma conditions on the emission spectra of species produced by the decomposition of SiCl4 in an argon-based microwave-induced plasma. The emission band at 330 nm recently confirmed to be due to SiCl2 and band structure at 390 nm are both found to be very dependent on SiCl4 flow rates. Evidence indicates that the 390 nm structure may be due to Si2.