Issue 0, 1979

Anomalous adsorption kinetics. γ-Nitrogen on the {110} plane of tungsten

Abstract

This study extends previous work on nitrogen adsorption on tungsten single crystal planes on the [001] zone to the {110} plane at low temperatures. The functional dependence of the sticking probability s on coverage at crystal temperatures between 90 and 120 K shows anomalous behaviour, in that (a) the initial sticking probability is low (0.22) by comparison with the expectation from other planes on the [001] zone and (b)s increases with coverage to a maximum at around half the saturation coverage. Desorption from this plane indicates a γ(molecular) state desorption peak temperature of ≈ 190 K. The results are compared with kinetic data from other planes on the [001] zone and a simple kinetic model is proposed, which accounts for the major features of the sticking probability profiles. On a second {110} crystal evidence was found for significant β(dissociative) state formation, attributable either to the presence of impurities or steps on this crystal. Changes of secondary electron yield with coverage in the γ state are found to be complex, in contrast to work function changes.

Article information

Article type
Paper

J. Chem. Soc., Faraday Trans. 1, 1979,75, 2100-2115

Anomalous adsorption kinetics. γ-Nitrogen on the {110} plane of tungsten

M. Bowker and D. A. King, J. Chem. Soc., Faraday Trans. 1, 1979, 75, 2100 DOI: 10.1039/F19797502100

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