Issue 0, 1976

Kinetics of the gas-phase reaction between iodine and trimethylsilane and the bond dissociation energy D(Me3Si—H)

Abstract

The title reaction has been investigated in the temperature range 519–618 K. The only products, formed in equal quantities, were trimethylsilyl iodide and hydrogen iodide, Rates were found to be surface sensitive below about 560 K, but not so in the range 567–618 K where the rate law [graphic omitted] was obeyed over a wide range of iodine and Me3SiH pressures. This expression is consistent with an iodine atom abstraction mechanism and for the step. I˙+ Me3SiH → Me3Si˙+ HI, log (k1/dm3 mol–1 s–1)= 10.9 – 82.3 kJ mol–1/RT 1n 10 has been deduced. From this the bond dissociation energy D(Me3Si—H)=(376 ± 11) kJ mol–1(90 kcal mol–1) is obtained. The implications of this value for the pyrolyses of organosilanes are discussed.

Article information

Article type
Paper

J. Chem. Soc., Faraday Trans. 1, 1976,72, 100-111

Kinetics of the gas-phase reaction between iodine and trimethylsilane and the bond dissociation energy D(Me3Si—H)

R. Walsh and J. M. Wells, J. Chem. Soc., Faraday Trans. 1, 1976, 72, 100 DOI: 10.1039/F19767200100

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