Dislocations intersecting (00l) planes in p-terphenyl have been revealed using the etch-pit technique. By observing different types of etch pits and pronounced alignments in crystallographic directions on (00l) faces of vapour- and melt-grown single crystals, conclusions are drawn regarding the active glide planes. Comparisons are made with anthracene and the stereochemistry of possible full and partial dislocations on (110) is discussed.
J. O. Williams, J. Chem. Soc. A, 1970, 2939 DOI: 10.1039/J19700002939
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