High-performance p-type MOSFETs based on Janus MoSTe for sub-5 nm CMOS scaling

Abstract

Janus transition metal dichalcogenides (JTMDs), with their intrinsic out-of-plane structural asymmetry, are promising channel materials for metal–oxide–semiconductor field-effect transistors (MOSFETs). However, while n-type JTMD MOSFETs have shown excellent performance, their p-type counterparts remain significantly limited. Here, using first-principles quantum transport simulations based on density functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) formalism, we demonstrate that the Janus MoSTe monolayer is a compelling channel material for high-performance (HP) and low-power (LP) p-type MOSFETs. We show that p-type MoSTe MOSFETs maintain excellent performance when scaled from sub-5 nm down to 0.34 nm gate lengths. We find that the on-state currents (I_on) reach 2234 and 1393 µA µm⁻¹ for HP and LP applications, respectively, far surpassing the requirements of the International Technology Roadmap for Semiconductors (ITRS) and ranking among the highest values reported for two-dimensional p-type MOSFETs to date. In the sub-1 nm gate-length regime, integration with high-κ gate dielectrics enables these devices to meet or exceed the ITRS benchmarks. Our results establish Janus MoSTe as one of the most competitive two-dimensional (2D) channel materials for ultra-scaled p-type MOSFETs, offering a viable route to overcome the low on-state current and high-power consumption that commonly limit p-type devices in complementary metal–oxide–semiconductor technologies.