Coexistence of the quantum anomalous Hall and anomalous Nernst effects in Cr-doped NaMgX (X = P, As, Sb) monolayers

Abstract

The integration of both the quantum anomalous Hall effect (QAHE) and the anomalous Nernst effect (ANE) into a single material system is critical yet remains a significant challenge for the advancement of multifunctional quantum devices. Herein, based on first-principles calculations, we predict that Cr-doped NaMgX (X = P, As, Sb) monolayers constitute a promising multifunctional platform for the simultaneous realization of both effects. The monolayers demonstrate robust structural, dynamic, and thermal stability—as evidenced by cohesive energy calculations, phonon spectra, and AIMD simulations—alongside high Curie-temperature (TC) ferromagnetism that remains insensitive to Hubbard U variations. Our analysis reveals that Na12Mg10Cr2X12 monolayers behave as 100% spin-polarized Weyl semimetals and maintain their topological stability under strain in the absence of spin–orbit coupling (SOC). Upon the introduction of SOC, the ferromagnetic Weyl semimetal phase undergoes a transition into a ferromagnetic topological insulator, characterized by a Chern number |C| = 1, well-defined chiral edge states, and a quantized Hall conductivity plateau. Notably, substantial anomalous Nernst coefficients are achieved, peaking at 6.02 A (m K)−1 for Na12Mg10Cr2As12 at 50 K. These findings establish Cr-doped NaMgX monolayers as a versatile platform hosting concurrent QAHE and ANE, paving the way for integrated, low-power microelectronic and thermal energy conversion devices.

Graphical abstract: Coexistence of the quantum anomalous Hall and anomalous Nernst effects in Cr-doped NaMgX (X = P, As, Sb) monolayers

Supplementary files

Article information

Article type
Paper
Submitted
20 Mar 2026
Accepted
20 Apr 2026
First published
05 May 2026

J. Mater. Chem. C, 2026, Advance Article

Coexistence of the quantum anomalous Hall and anomalous Nernst effects in Cr-doped NaMgX (X = P, As, Sb) monolayers

X. Liu, H. Fu, J. He, Y. Xiong, J. Zhang, S. Ding, Z. Cheng and Z. Wu, J. Mater. Chem. C, 2026, Advance Article , DOI: 10.1039/D6TC00894A

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