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Multiplet structure of chromium(III) dopants in wide band gap materials

Ilya Popova, Petros-Panagis Filippatosa, Shayantan Chaudhuria, Andrei L. Tchougréeffb, Katherine Inzania and Elena Besley*a
aSchool of Chemistry, University of Nottingham, Nottingham NG7 2RD, UK. E-mail: Elena.Besley@nottingham.ac.uk
bFrumkin Institute of Physical Chemistry and Electrochemistry of the Russian Academy of Sciences, Moscow 119071, Russia

Received 8th November 2025 , Accepted 23rd December 2025

First published on 24th December 2025


Abstract

Transition metal doping is commonly used for altering the properties of solid-state materials to suit applications in science and technology. Partially filled d-shells of transition metal atoms lead to electronic states with diverse spatial and spin symmetries. Chromium(III) cations have shown great potential for designing laser materials and, more recently, for developing spin qubits in quantum applications. They also represent an intriguing class of chemical systems with strongly correlated multi-reference excited states, due to the d3 electron configuration. These states are difficult to describe accurately using single-reference quantum chemical methods such as density functional theory (DFT), the most commonly used method to study the electronic structures of solid-state systems. Recently, the periodic effective Hamiltonian of crystal field (pEHCF) method has been shown to overcome some limitations arising in the calculations of excited d-states. In this work, we assess the suitability of DFT and pEHCF to calculate the electronic structure and d–d excitations of chromium(III) dopants in wide band gap host materials. The results will aid computational development of novel transition metal-doped materials and provide a deeper understanding of the complex nature of transition metal dopants in solids.


1 Introduction

Solid-state materials containing transition metal dopants are widely used in many areas of science and engineering, including optoelectronics,1,2 optics,3,4 laser technologies,5–7 photovoltaics and photoelectrochemistry,8,9 spintronics,10 semiconductors,10–12 and quantum computing.13,14 The distinct properties of transition metal atoms primarily stem from the partially filled d-shells, which lead to a rich multiplet structure of the electronic spectrum, including states with different spatial and spin symmetries and respective degrees of degeneracy. The structure of d-multiplets can be fine-tuned by targeting doping sites with particular symmetries and modifying the host material to affect dopant–host interactions. Chromium(III) (Cr3+) is an attractive dopant choice as its d3 electronic configuration and corresponding multiplet structure make it a useful candidate for laser materials15,16 and spin qubits.13 For example, Sewani et al.13 demonstrated optical initialization and read-out, along with long relaxation times, for the S = 3/2 spin population associated with Cr3+ dopants in Al2O3, where S is the spin quantum number. Continued investigations of Cr3+ and other transition metal dopants in different host materials will prove fruitful for quantum technologies by providing a rich set of systems for extended applications.

Dopants with open d-shells exhibit electronic correlation effects17 of both static and dynamical nature, which occur due to the strong electron–electron interactions characteristic of d-electrons. Static correlations appear when the ground state (or an excited state of interest) exhibits a multi-reference character, i.e. it cannot be represented quantitatively by a single Slater determinant (see Benavides-Riveros et al.18 and references therein for further details). Such correlation effects are present in systems with electron (quasi-)degeneracy, which are typical for the d-states of transition metals in highly symmetrical crystal fields,19 either ideal or slightly distorted. These strongly correlated materials pose a significant challenge to computational research20,21 as the electronic structure of d-multiplets cannot be adequately captured by standard density functional theory22,23 (DFT) methods, which are commonly employed to investigate the electronic structures of solid-state systems. Limitations of DFT are most pronounced when calculating the d–d excitations and band gaps of strongly-correlated systems. Advanced methods based on hybrid density-functional approximations can yield better results than standard semi-local functionals,24 however these solutions are not universal and have limitations on the types of excitations that can be accurately predicted.25

This highlights the pressing requirement to search beyond DFT for more reliable methods for electronic structure calculations. One of the most direct ways for addressing strong correlations involves the use of post-Hartree–Fock approaches, such as complete active space self-consistent field (CASSCF),26 second-order Møller–Plesset perturbation theory27 and coupled cluster methods.28 While examples of applying post-Hartree–Fock treatment to solid-state materials exist in the literature,29–31 the range of applications is limited due to a strong scaling with system size. CASSCF has occasionally been used to calculate the energies of local d–d excitations in small (finite) clusters that represent the first coordination sphere of a transition metal atom in a crystalline system.14 This approach is, however, associated with significant underestimation of the delocalization effects taking place in extended systems. An alternative to post-Hartree–Fock approaches is to combine multiple electronic structure methods within a hybrid embedding approach, whereby the electronic structure of localized d-shells is treated using a correlated method and the host is described within a weakly correlated (e.g. one-electron self-consistent field) treatment. Such a hybrid approach allows one to reduce computational costs while providing a multi-reference description of strongly correlated d-electrons. One of the examples of hybrid electronic structure methods used in solid state theory is dynamical mean-field theory.32

In our previous work33 we extended a hybrid embedding method, called the effective Hamiltonian of crystal field (EHCF),34,35 to periodic systems (pEHCF). pEHCF has been shown to be successful in describing the d-multiplet structure of various solid materials including oxides,33 carbodiimides and metal–organic frameworks.36,37 In this work, we evaluate and compare the suitability of DFT and pEHCF to investigate the electronic structure and d–d excitations of Cr3+ dopants in three wide band gap host materials: corundum (α-Al2O3), aluminium oxonitridoborate (AlB4O6N)38 and chrysoberyl (BeAl2O4).

α-Al2O3 with Cr3+ dopants is a well-known laser material15,39 with excellent optical properties and distinctive fluorescence which has been also explored for quantum applications.13 AlB4O6N recently synthesized by Widmann et al.38 possesses interesting fluorescence and luminescence properties as well as high thermal stability. Finally, BeAl2O4 has been widely utilized in solid-state laser technologies due to its exceptional emission properties in the 700–800 nm range.40 All three host materials show characteristics that are promising for quantum technologies which will benefit from deeper understanding of the complex electronic structure of transition metal dopants in solids provided in this study.

2 Methodology

2.1 Periodic effective hamiltonian of crystal field

The periodic effective Hamiltonian of crystal field (pEHCF) method splits the electronic system into two subsystems, where one contains only the local d-shell(s) of transition metal atoms and the other includes the crystalline environment embedding these shells.33 The idea of such division of the electronic system into subsystems was first proposed by Harrison,41 who considered the electronic structure of transition metal oxides as delocalized s,p-bands augmented with local d-multiplets. Mathematically, this splitting is performed by separating a space of one-electron states into d- and l-subspaces spanned by local atomic d- and s,p-orbitals, respectively. Transition metal s,p-orbitals are included in the l-subsystems along with the orbitals of light elements. The many-electron wavefunction of the system is expressed using eqn (1):
 
Ψ = Ψd(nd) ∧ Ψl(Nnd) (1)
where Ψd and Ψl are the many-electron wavefunctions built in the d- and l-subspaces, respectively, nd is the number of electrons in the d-subspace, N is the total number of electrons in the system, and ∧ stands for the antisymmetric product. The wavefunctions Ψd and Ψl are treated differently. In the case of an impurity ion, its strongly correlated d-shell is described by a full configuration interaction wavefunction:
 
image file: d5tc03978a-t1.tif(2)
where the summation goes over all configurations, Ψi, with coefficients ci, built on d-orbitals of the impurity ion. This accounts for correlations in the d-shell and accurately reproduces both the energy and spin multiplicity of the excited d-multiplets. The non-correlated l-subsystem is treated using the Hartree–Fock method with the single-determinant wavefunction in the basis of the Bloch states constructed from the s,p-atomic orbitals of the system.33

The wavefunction in eqn (1) assumes the number of electrons in both d- and l-subsystems to be fixed and therefore excludes charge transfer states. The presence of such states is taken into account in pEHCF by the Löwdin partitioning technique,42 which provides effective corrections to the Hamiltonian operators of the subsystems arising due to the electron hopping between them.33,34 This results in the effective Hamiltonian for the d-subsystem, image file: d5tc03978a-t2.tif, having the following form:

 
image file: d5tc03978a-t3.tif(3)
where d+μσ and dμσ are the electron creation and annihilation operators, respectively, for the μ-th d-orbital, σ and τ correspond to the spin projection, and h.c. is the Hermitian conjugate. The second term includes two-electron one-center integrals (μν|λη) over atomic d-orbitals and describes the two-electron Coulomb interactions within the d-shell. The one-electron part of image file: d5tc03978a-t4.tif includes the bare Hamiltonian of the d-subsystem image file: d5tc03978a-t5.tif, and both Coulomb image file: d5tc03978a-t6.tif and resonance image file: d5tc03978a-t7.tif interactions of d-electrons with electrons and nuclei in the l-subsystem. Contributions from image file: d5tc03978a-t8.tif and image file: d5tc03978a-t9.tif determine the ‘splitting parameter’ of the d-orbitals, as referred to within the crystal field theory. In pEHCF, unlike in the crystal field theory, the main contribution to the splitting of d-orbitals is the resonance interactions33,34 corresponding to the one-electron transfers between the d- and l-subsystems. Therefore, image file: d5tc03978a-t10.tif is the most important factor when analyzing variations in the splitting parameters during spin-crossover processes. The matrix elements of image file: d5tc03978a-t11.tif have the following form:33,43
 
image file: d5tc03978a-t12.tif(4)
where the summation is over atomic orbitals (AOs) a and b of the l-subsystem, βμa are resonance (hopping) integrals between the μ-th d-orbital and l-AO a, and Id and Ad are the ionization potential and electron affinity, respectively, of the d-subsystem. The orbital-projected Green's functions, G±ab, of the l-subsystem are expressed as:
 
image file: d5tc03978a-t13.tif(5)
 
image file: d5tc03978a-t14.tif(6)

In eqn (5) and (6), k is a vector in the first Brillouin zone, n enumerates bands of the l-subsystem, and εnk and fnk are energies and occupation numbers, respectively, of the l-bands. Spin variables are omitted for clarity. As can be seen, the resonance term (and therefore the splitting of the d-orbitals) depends on three main factors: the geometry of the first coordination sphere through the resonance integrals between local atomic orbitals (βμa), the occupations of local atomic orbitals forming the first coordination sphere, and the energy difference between d-states and the valence/conduction bands of the l-subsystem.

Solving the linear Schrödinger equation for the wavefunction of the d-system, as shown in eqn (2), with the effective Hamiltonian in eqn (3) produces the whole spectrum of energies for the d-multiplets with all allowed spins and symmetries, among them the ground state. pEHCF electronic structure calculations were performed for geometries obtained by DFT with use of the r2SCAN44 meta-generalized gradient approximation as described below.

2.2 Density functional theory calculations

Kohn–Sham DFT22,23 calculations were performed using version 6.4.1 of the Vienna ab initio Simulation Package (VASP)45–47 software within the spin-polarized framework, with the Be (s1.99p0.01), B (2s22p1), and O (2s22p4), Al (3s23p1), and Cr_sv (3s23p63d54s1) projector-augmented wave pseudopotentials.46,48 The r2SCAN44 meta-generalized gradient approximation (meta-GGA) and the HSE0649,50 range-separated hybrid generalized gradient approximation were used to perform geometry optimization of the structures and their corresponding density of states. Converged plane-wave cut-off energies of 700 eV, 700 eV, and 750 eV were used for the Al2O3, BeAl2O4, and AlB4O6N hosts, respectively. Furthermore, a reciprocal space grid (k-grid) of size 4 × 4 × 2 was used for the primitive unit cells. Convergence tests for the plane-wave cut-off energy and k-point mesh were performed until the total energies from single-point calculations were converged to within 1 meV atom−1. All undoped structures were optimized until the residual forces on all ions were less than 0.001 eV Å−1 while for the defected supercells the convergence criterion of forces on all ions was set to 0.01 eV Å−1. The energy convergence criterion for geometry optimizations was set to 10−6 eV. For the defect structures, 2 × 2 × 1 expanded supercells of 120, 168, and 192 atoms were used for α-Al2O3, BeAl2O4, and AlB4O6N, respectively, to reduce interactions between periodic images of the defects. Delta self-consistent field (ΔSCF) calculations were performed to determine the electronic excited states and the corresponding absorption energies.51,52 This method is known to be highly effective for calculating excitation energies in quantum defects.53 The ΔSCF occupation for the spin-up and spin-down components at each k-point was manually set to fix the electron configuration of the system. This provides the total energy of the excited structure without relaxing the geometry. We use this method to simulate the vertical excitations of the first and second excited states of crystal hosts.

3 Results and discussion

The crystal lattices of α-Al2O3, AlB4O6N, and BeAl2O4 correspond to trigonal, hexagonal and orthorhombic systems with space groups R[3 with combining macron]c,54 P63mc38 and Pbnm,55 respectively. Their experimental crystal parameters along with the values calculated by r2SCAN and HSE06 are collected in Table 1. The calculated values are within 1% of the reported experimental data for all three structures. In all materials, the Cr3+ dopant substitutes an aluminium cation (Al3+), leading to the formation of six-coordinate dopant sites of various symmetries, as shown in Fig. 1. The geometries of the Cr3+ dopant in each host, obtained with use of r2SCAN and HSE06, are illustrated in Fig. 2 (all structures are given in SI). The dopant site in AlB4O6N is of high Oh symmetry with minimal distortion from the perfect octahedral coordination characterized by bond length deviation not exceeding 0.01 Å and bond angles deviating from the perfect 90° by 0.8°. α-Al2O3 also has a single dopant site that exhibits C3 symmetry and BeAl2O4 has two dopant sites characterized by Cs (Wyckoff position 4c) and Ci (Wyckoff position 4a) local symmetry point groups. In all cases, the geometries of the coordination spheres are close to that of a regular octahedron, with fairly small distortions resulting in symmetry lowering. In CrAl3+:α-Al2O3, the distortion is characterized by a maximum deviation of 0.05 Å in Cr–O bond lengths and a maximum deviation of 10° in bond angles, whereas in the case of CrAl3+:BeAl2O4 these values are 0.09 Å and 10°, respectively. Due to this, we use the notations of irreducible representations of the Oh point group to label electronic states in all three systems and separately discuss splittings of the high-symmetry multiplets caused by the imperfections of dopant sites. As follows from the Tanabe–Sugano diagram of the d3 configuration in an octahedral field, Cr3+ cations must always have a high-spin quartet (S = 3/2) ground state (4A2), and a set of low-spin quartet and doublet (S = 1/2) excited states, the order and energies of which depend on the interactions of the Cr3+ dopant with its host. Transitions between these states correspond to the class of crystal field d–d excitations and can be experimentally probed via ultraviolet-visible and photoluminescence spectroscopy. We further test the capabilities of DFT and pEHCF in reproducing the energies and spin-symmetries of excited d-multiplets of Cr3+ dopants.
Table 1 Experimental (Exp.) lattice parameters (in Å) of α-Al2O3, AlB4O6N, and BeAl2O4 compared to the DFT calculations performed in this work
  α-Al2O3 AlB4O6N BeAl2O4
Exp.56 r2SCAN HSE06 Exp.38 r2SCAN HSE06 Exp.55 r2SCAN HSE06
a 4.76 4.76 4.75 5.03 5.03 5.02 9.42 9.40 9.39
b 5.48 5.47 5.47
c 12.98 12.98 12.96 8.23 8.23 8.22 4.43 4.42 4.41



image file: d5tc03978a-f1.tif
Fig. 1 Crystalline structures of Cr3+-doped (a) α-Al2O3, (b) AlB4O6N, and BeAl2O4 at (c) Cs- and (d) Ci-symmetrized sites. Cell boundaries are shown with black dotted lines. All shown crystalline structures are available in SI for both r2SCAN and HSE06 functionals.

image file: d5tc03978a-f2.tif
Fig. 2 Ground-state geometries of the Cr coordination sphere and the splitting diagrams of the one-electron d-states for (a) α-Al2O3, (b) AlB4O6N, and BeAl2O4 at (c) Cs- and (d) Ci-sites. The corresponding splitting parameters of the one-electron d-states calculated with r2SCAN, HSE06, and pEHCF are presented in Table 2.

First, we analyse the one-electron states of the three systems, as calculated using DFT and pEHCF methods. The atomic orbital-projected density of states (DOS) for the ground states of Cr3+-doped α-Al2O3, AlB4O6N, and BeAl2O4 are shown in Fig. 3. For all systems, as can be seen from the r2SCAN-calculated DOS, the narrow d-bands of Cr3+ lie within the gap between the wide sp valence and conduction bands of the host. The small width of the d-bands indicates a small degree of coupling between the d-shell and sp-states, supporting the assumption regarding the locality of d-shells that is employed within pEHCF. In the case of DFT, there is a minor contribution from the oxygen 2p states in the gap states reflecting a small degree of hybridization with the chromium 3d states. The pEHCF-calculated DOS plots qualitatively agree with DFT regarding the position of the one-electron d-states and the structure of the frontier sp-bands. The valence band of the sp-subsystem mostly comprises oxygen 2p orbitals for each host material, whereas the conduction band has significant contributions from aluminium 3p orbitals. If the concentration of Cr3+ dopants is sufficiently low, the gap between the valence and conduction sp-bands should be close to the band gap of the host material.


image file: d5tc03978a-f3.tif
Fig. 3 The atomic orbital-projected density of states (DOS) for Cr3+-doped (a) α-Al2O3, (b) AlB4O6N and (c) BeAl2O4 (Cs), as calculated using the r2SCAN, HSE06 and pEHCF. The total density of states, chromium 3d, oxygen 2p and aluminium 3p states are shown in gray, red, green and blue, respectively. Other atomic orbitals are not shown for clarity. For the purpose of comparison across all three methods, the position of the reference point on the energy axis is chosen such that the top of the sp-valence band corresponds to 0 eV. In pEHCF, the peaks corresponding to the d-states indicate the position of the one-electron d-orbitals. This representation does not fully reflect the complexity of the electronic structure of the d-system containing multi-reference many-electron multiplets described by pEHCF.

Our calculations show that for the given unit cells, the sp-band gaps of the doped materials are smaller than the band gaps of the pure hosts by 0.1–0.2 eV, which can be compared against corresponding experimental values. Experimental values of the band gap of α-Al2O3 have been reported to range from 8.15–9.40 eV depending on conditions,57 while the reported experimental value for BeAl2O4 is 9.00 eV.58 The calculated values of the band gap are compared to the available experimental data in Table 2. It shows that pEHCF systematically overestimates the gap by 0.50–1.50 eV for CrAl3+:α-Al2O3 and by 2.00 eV for CrAl3+:BeAl2O4 as the Hartree–Fock method is used to calculate the electronic structure of the sp-subsystem. In contrast, r2SCAN underestimates the band gap by about 1.5 eV for both materials whilst HSE06 gives the improved values of 8.15 eV for α-Al2O3 and 8.38 eV for BeAl2O4. No experimental band gap value has been reported for AlB4O6N, but we calculate a band gap of 9.78 eV using HSE06. Other reported theoretical band gap values range from 7.32–9.31 eV, depending on the computational method.38

Table 2 Energies of the one-electron d-states of Cr3+ dopants and sp-band gaps calculated using different quantum mechanical methods. The calculated values of the band gap are compared to available experimental data for α-Al2O3 and BeAl2O4
Host → α-Al2O3 AlB4O6N BeAl2O4 (Cs) BeAl2O4 (Ci)
pEHCF r2SCAN HSE06 pEHCF r2SCAN HSE06 pEHCF r2SCAN HSE06 pEHCF r2SCAN HSE06
t2g [eV] 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00
0.00 0.00 0.00 0.06 0.05 0.11 0.19 0.05 0.05 0.14 0.09 0.08
0.03 0.10 0.10 0.10 0.05 0.11 0.30 0.07 0.09 0.37 0.19 0.15
eg [eV] 2.08 4.04 6.21 2.40 4.15 6.32 2.50 3.92 6.11 2.95 4.29 6.47
2.15 4.04 6.21 2.55 4.15 6.32 2.69 4.06 6.26 3.17 4.40 6.59
Espgap [eV] 9.86 7.22 8.21 13.45 7.99 9.72 11.71 7.45 8.45 11.77 7.45 8.42
Exp. Espgap [eV]   8.15–9.4057         9.0058     9.0058  


Splitting diagrams for the one-electron d-states and the ground state, as calculated with pEHCF, r2SCAN and HSE06, are shown in Fig. 2. All methods qualitatively follow the same symmetry considerations, exhibiting a significant t2g–eg splitting characteristic of an octahedral crystal field. An additional minor splitting within the threefold degenerate t2g manifold is present in CrAl3+:α-Al2O3 (C3 symmetry), while full degeneracy lifting occurs for CrAl3+:BeAl2O4, which possesses lower-symmetry (Cs and Ci) dopant sites. Quantitatively, the absolute magnitudes of crystal-field splittings differ significantly between pEHCF and the DFT methods (Table 2). For instance, the r2SCAN splitting of t2g–eg has values of around 4.00–4.40 eV; HSE06 provides splittings of 6.10–6.60 eV, while pEHCF shows splittings of 2.08–3.47 eV. This disparity is to be expected due to the nature of the one-electron energies in both methods. pEHCF splitting diagrams correspond to the eigenvalues of the one-electron part of the effective Hamiltonian, whereas energy levels produced by DFT already include an effect of d–d electron interactions. From this point of view, pEHCF produces splitting parameters that are usually discussed in the literature related to spectroscopy of transition metal ions, such as 10Dq in the Oh crystal field.

Many-electron multiplet energies calculated using r2SCAN, HSE06, and pEHCF are detailed in Tables 3–5 for the three materials, where they are compared against experimental values. Theoretically, the simplest transition is 4A24T2, which corresponds to the promotion of one electron from the t2g-orbital to the eg-orbital. Both multiplets can be accurately described using a single determinant wavefunction;19 the effect of static correlations should therefore be minor. r2SCAN and HSE06 accurately reproduce the energy of this transition for all materials with absolute errors compared to experiment ranging between 0.10–0.15 eV, and pEHCF also provides the same level of accuracy. As shown in Table 3, CASSCF calculations previously performed14 for a finite [CrO6]9− cluster cut out from Cr3+:Al2O3 give slightly larger errors for the 4A24T2 transition as compared to DFT and pEHCF.

Table 3 Calculated energies (in eV) of excited d-multiplets of CrAl3+:α-Al2O3 using different quantum mechanical methods compared to optical absorption spectroscopy data and CASSCF calculations for a [CrO6]9− cluster (cut from CrAl3+:α-Al2O3) from Shang et al.14 The 4A22E transition is extracted from the R-line in the experimental references
Transition Experiment pEHCF r2SCAN HSE06 CASSCF
4A22E 1.78;60 1.8061 1.90 1.21 1.14 1.7814
4A22T1 Not resolved 1.97; 2.00
4A24T2 2.22;60,61 2.25;62 2.2860 2.08; 2.14 2.37 2.36 2.4914
4A22T2 Not resolved 2.82; 2.83; 2.90
4A24T1 3.01–3.03;60–62 3.1260 2.94; 2.97; 3.11 3.31 3.05


Table 4 Calculated energies (in eV) of excited d-multiplets of CrAl3+:AlB4O6N using different quantum mechanical methods compared to photoluminescence excitation and emission spectroscopy data for the 4A22E transition from Widmann et al.38
Transition Experiment pEHCF r2SCAN HSE06
4A22E 1.81 1.91 1.25 1.12
4A22T1 1.89 1.99; 2.01
4A24T2 2.43 2.40; 2.42; 2.44 2.46 2.49
4A22T2 2.70 2.89; 2.92
4A24T1 3.26 3.30; 3.32 3.49 3.46


Table 5 Calculated energies (in eV) of excited d-multiplets of CrAl3+:BeAl2O4 using different quantum mechanical methods compared to ultraviolet-visible spectroscopy data from Demirbas et al.63
Transition Experiment Cs site Ci site
pEHCF r2SCAN HSE06 pEHCF r2SCAN HSE06
4A22E 1.82 1.89; 1.90 1.27 1.17 1.80; 1.89 1.22 1.15
4A22T1 1.91 1.95; 1.99; 2.00 1.91; 2.01; 2.04
4A24T2 2.10 2.34; 2.41; 2.52 2.18 2.16 2.72; 2.91; 2.95 2.47 2.49
4A22T2 2.91; 2.95; 2.96 3.00; 3.04; 3.09
4A24T1 3.02 3.23; 3.37 2.98 2.72 3.64 3.16 3.02


Other excited states, such as 2E, have significant multi-reference character, and correct description of their electronic structure is therefore much more challenging for DFT. As has been previously shown with ΔSCF, the low-spin excited states may not be achievable or could be significantly underestimated with respect to experimental values.59 This is clearly illustrated by the results for the 2E multiplet that presents an interest for Cr3+-based spin qubits as it plays an important role in the inter-system crossing pathway.59 Both r2SCAN and HSE06 consistently underestimate the energy of the 2E state as compared to experiments, with absolute errors ranging between 0.50–0.60 eV. At the same time, pEHCF provides good accuracy for the 4A22E lines for all materials, with absolute errors ranging between 0.07–0.11 eV. The 2T1 and 2T2 states are even more complicated, as their energies cannot be calculated using ΔSCF at all due to their multi-reference nature. This is because their many-determinant wavefunctions cannot be approximated by the one-electron population matrix that is used to set up a trial Kohn–Sham wavefunction in ΔSCF. Full configuration interaction treatment of the d-shell, as implemented in pEHCF, permits the 2T1 and 2T2 wavefunctions to be determined and results in energies that are in good agreement with experimental data for all systems.

Regarding the second excited quartet state, 4T1, all methods agree well with experimental data. For CrAl3+:α-Al2O3, pEHCF successfully captures the reported experimental values ranging from 3.01–3.12 eV.60–62 r2SCAN and HSE06 give excitation energies of 3.31 eV and 3.05 eV, respectively. For CrAl3+:AlB4O6N, the second excited quartet is calculated to be 3.30 eV in pEHCF and 3.46–3.49 eV by DFT methods, which can be compared to the experimental value of 3.26 eV.38 Finally, for CrAl3+:BeAl2O4, the experimentally reported value of 3.02 eV63 agrees well with our r2SCAN-calculated energy of 2.98 eV for the Cs-symmetrized site and our HSE06-calculated energy of 3.02 eV for the Ci-symmetrized site. In contrast, pEHCF overestimates the energy of 4A24T1 transition by 0.20 eV and 0.10 eV for the Cs- and Ci-symmetrized sites, respectively.

We also note an interesting discrepancy with experimental data for CrAl3+:BeAl2O4 at the Ci dopant site. As shown in Table 5, the pEHCF-, r2SCAN-, and HSE06-calculated energies for the 4A24T2 transition are in good agreement with the experimentally observed line for the Cs dopant site. However, for the Ci dopant site, the 4A24T2 transition is significantly overestimated by all computational methods: by around 0.6–0.9 eV with pEHCF and 0.4 eV with DFT. This indicates that the Cs dopant site might be largely responsible for the experimental emission, whereas the Ci dopant site plays a minor role. This conclusion is further supported by our DFT calculations showing that Cr3+ in the Cs-symmetrized site lies lower in energy than the Ci-symmetrized site by 0.17 eV and 0.19 eV for r2SCAN and HSE06, respectively. A wide range of experimental studies confirm the preference of the Cs site. For instance, electron paramagnetic resonance and optical absorption spectroscopic analyses of BeAl2O4 indicate that 75% of Cr3+ ions substitute the Cs-symmetrized site.64 Using X-ray absorption spectroscopy, Bordage et al.65 also confirmed Cr3+ substitution at the Cs-symmetrized site to be 70%. These experimental findings are consistent with our computational results suggesting that the optical features observed experimentally predominantly correspond to Cr3+ substitution at the energetically and structurally favoured Cs-symmetrized site.

Our results show that, for the excited multiplets of Cr3+, r2SCAN and HSE06 functionals consistently give close energy values and perform particularly well for the high-spin states. Previous work on NV-like defects has shown that both hybrid density-functional approximation and meta-GGA can yield reliable predictions for the formation energy and charge transition levels.66 However, as shown in ref. 67, HSE06 may fail for transition metal containing systems due to the Coulombic interactions between localised d-electrons not being sufficiently screened. This results in an incomplete removal of self-interaction error and violation of the generalized Koopmans' condition. This makes r2SCAN a competitive, lower-cost alternative to hybrid density-functional approximations for systems containing transition metal atoms, particularly when combined with the pEHCF multi-reference treatment of the d-shell.

Conclusions

In this work, we have used the r2SCAN meta-GGA and the range-separated HSE06 hybrid density-functional approximation, alongside the wavefunction-based pEHCF method, to investigate the electronic structure of the low-lying d–d excited states of chromium(III) dopants in three wide band gap materials. Our results demonstrate that the energy of the 4A24T2 and 4A24T1 transitions between single-reference quartet states can be accurately described by all three methods with a similar level of accuracy. r2SCAN and HSE06 yield similar results for the high-spin excited states, making r2SCAN an accurate and relatively low-cost density-functional approximation compared to HSE06. At the same time, high-spin to low-spin transitions are much more difficult to capture with DFT methods. However, as the pEHCF method treats open d-shells at the configuration interaction level, the energies of all the transitions can be calculated at a high level of accuracy. A combination of DFT and pEHCF, therefore, provides a reliable tool for the quantitative study of transition metal-doped materials. While DFT is effective in predicting ground-state geometry and properties and certain high-spin excited states, its underestimation of the energies of low-spin configurations due to their multi-reference nature is a considerable limitation. In contrast, pEHCF, with its full configuration interaction treatment of the d-shell, excels at capturing these multiplets, as well as the energies of spin-forbidden transitions. Our proposed computational framework can guide future materials design for optical, magnetic and quantum technologies.

Author contributions

I. P. – conceptualization, investigation (pEHCF calculations), data curation, visualization, writing – original draft & editing. P.-P. F. – investigation (DFT calculations), data curation, visualization, writing – original draft & editing. S. C. – investigation (DFT calculations), writing – review & editing. A. L. T. – conceptualization, writing – review & editing. K. I. – conceptualization, supervision, writing – review & editing. E. B. – conceptualization, supervision, writing – review & editing, project administration.

Conflicts of interest

There are no conflicts to declare.

Data availability

The structural data supporting this article have been included as part of the supplementary information (SI). Supplementary information is available. See DOI: https://doi.org/10.1039/d5tc03978a.

Acknowledgements

E. B. acknowledges a Royal Society Wolfson Fellowship and the EPSRC Program Grant “Enabling Net Zero and the AI Revolution with ultra-low energy 2D Materials and Devices (NEED2D)” [UKRI-1249] for funding. E. B. and I. P. are funded by the EPSRC Program Grant “Metal Atoms on Surfaces and Interfaces (MASI) for Sustainable Future” [EP/V000055/1]. K. I. and P.-P. F. are funded by the EPSRC Fellowship Programme [EP/W028131/1] and S. C. is funded by Wellcome Leap as part of the Quantum for Bio Program. The work of A. L. T. is supported by the Ministry of Science and Higher Education of the Russian Federation. Computing resources were provided by the University of Nottingham, the EPSRC-funded HPC Midlands+ consortium [EP/T022108/1] for access to Sulis, and the EPSRC-funded High-End Computing Materials Chemistry Consortium [EP/X035859/1] for access to the ARCHER2 UK National Supercomputing Service (https://www.archer2.ac.uk). P.-P. F. acknowledges Prof. Ádám Gali and Dr Gergő Thiering (Wigner Research Centre for Physics, Hungarian Academy of Sciences) for useful discussions. The authors also thank the reviewers for their valuable assessment of this work.

References

  1. Z. Suo, J. Dai, S. Gao and H. Gao, Results Phys., 2020, 17, 103058 Search PubMed.
  2. K. O. Egbo, A. E. Adesina, C. V. Ezeh, C. P. Liu and K. M. Yu, Phys. Rev. Mater., 2021, 5, 094603 Search PubMed.
  3. K. Greeshma, A. K. Adiyodi, S. Ancy, S. P. Dhale, N. S. Ugemuge and K. Nissamudeen, Spectrochim. Acta, Part A, 2025, 337, 126086 Search PubMed.
  4. S. Dhale, A. Nande, N. Ugemuge, V. S. Singh and S. V. Moharil, Spectrochim. Acta, Part A, 2025, 337, 126088 Search PubMed.
  5. I. T. McKinnie, L. A. W. Gloster, Z. X. Jiang and T. A. King, Appl. Opt., 1996, 35, 4159 Search PubMed.
  6. T. Carrig, A. Zakel, G. Wagner and W. Alford, 2005 IEEE LEOS Annual Meeting Conference Proceedings, 2005, pp. 260–261.
  7. N. Z. Alpaslan Yayli, A. C. Talmac, S. Keskin Tunc, D. Akbal, D. Altindal and A. S. Ertugrul, Lasers Med. Sci., 2021, 37, 665–674 Search PubMed.
  8. S. Wieghold, Y. Luo, A. S. Bieber, J. Lackner, N. Shirato, Z. A. VanOrman, D. Rosenmann, K. Nienhaus, B. Lai, G. U. Nienhaus, V. Rose and L. Nienhaus, Chem. Mater., 2021, 33, 6099–6107 Search PubMed.
  9. H. Maruska and A. K. Ghosh, Sol. Energy Mater., 1979, 1, 237–247 Search PubMed.
  10. V. Dierolf, I. Ferguson and J. Zavada, Rare Earth and Transition Metal Doping of Semiconductor Materials. Synthesis, Magnetic Properties and Room Temperature Spintronics, Woodhead Publishing, 2016 Search PubMed.
  11. Y. Murai, S. Zhang, T. Hotta, Z. Liu, T. Endo, H. Shimizu, Y. Miyata, T. Irisawa, Y. Gao, M. Maruyama, S. Okada, H. Mogi, T. Sato, S. Yoshida, H. Shigekawa, T. Taniguchi, K. Watanabe, R. Canton-Vitoria and R. Kitaura, ACS Nano, 2021, 15, 19225–19232 Search PubMed.
  12. E. C. R. Lopez, Next Mater., 2025, 8, 100550 Search PubMed.
  13. V. K. Sewani, R. J. Stöhr, R. Kolesov, H. H. Vallabhapurapu, T. Simmet, A. Morello and A. Laucht, Phys. Rev. B, 2020, 102, 104114 Search PubMed.
  14. L. Shang, Q. Chen, W. Jing, C.-G. Ma, C.-K. Duan and J. Du, Phys. Rev. Mater., 2022, 6, 086201 Search PubMed.
  15. T. H. Maiman, Nature, 1960, 187, 493–494 Search PubMed.
  16. A. Sennaroglu and Y. Morova, Appl. Phys. B:Lasers Opt., 2021, 128, 9 Search PubMed.
  17. P.-O. Löwdin, Phys. Rev., 1955, 97, 1509–1520 Search PubMed.
  18. C. L. Benavides-Riveros, N. N. Lathiotakis and M. A. L. Marques, Phys. Chem. Chem. Phys., 2017, 19, 12655–12664 Search PubMed.
  19. Y. Tanabe and S. Sugano, J. Phys. Soc. Jpn., 1954, 9, 753–766 Search PubMed.
  20. J. Lischner, J. Deslippe, M. Jain and S. G. Louie, Phys. Rev. Lett., 2012, 109, 036406 Search PubMed.
  21. E. Pavarini, Riv. Nuovo Cimento, 2021, 44, 597–640 Search PubMed.
  22. P. Hohenberg and W. Kohn, Phys. Rev., 1964, 136, B864–B871 Search PubMed.
  23. W. Kohn and L. Sham, Phys. Rev., 1965, 140, A1133–A1138 Search PubMed.
  24. K. Czelej, M. Rey Lambert, M. E. Turiansky, A. Koshevarnikov, S. Mu and C. G. Van de Walle, ACS Nano, 2024, 18, 28724–28734 Search PubMed.
  25. J. Yang, S. Falletta and A. Pasquarello, npj Comput. Mater., 2023, 9, 108 Search PubMed.
  26. J. Olsen, Int. J. Quantum Chem., 2011, 111, 3267–3272 Search PubMed.
  27. M. Head-Gordon, J. A. Pople and M. J. Frisch, Chem. Phys. Lett., 1988, 153, 503–506 Search PubMed.
  28. B. Jeziorski and H. J. Monkhorst, Phys. Rev. A:At., Mol., Opt. Phys., 1981, 24, 1668–1681 Search PubMed.
  29. G. H. Booth, A. Grüneis, G. Kresse and A. Alavi, Nature, 2012, 493, 365–370 Search PubMed.
  30. T. Gruber, K. Liao, T. Tsatsoulis, F. Hummel and A. Grüneis, Phys. Rev. X, 2018, 8, 021043 Search PubMed.
  31. V. A. Neufeld, H.-Z. Ye and T. C. Berkelbach, J. Phys. Chem. Lett., 2022, 13, 7497–7503 Search PubMed.
  32. A. Georges, G. Kotliar, W. Krauth and M. J. Rozenberg, Rev. Mod. Phys., 1996, 68, 13–125 Search PubMed.
  33. I. Popov, E. Plekhanov, A. Tchougréeff and E. Besley, Mol. Phys., 2023, 121, e2106905 Search PubMed.
  34. A. V. Soudackov, A. L. Tchougréeff and I. A. Misurkin, Theor. Chim. Acta, 1992, 83, 389–416 Search PubMed.
  35. A. L. Tchougréeff, A. V. Soudackov, J. van Leusen, P. Kögerler, K. Becker and R. Dronskowski, Int. J. Quantum Chem., 2015, 116, 282–294 Search PubMed.
  36. I. Popov, D. Raenko, A. Tchougréeff and E. Besley, J. Phys. Chem. C, 2023, 127, 21749–21757 Search PubMed.
  37. I. Popov, A. Tchougréeff and E. Besley, J. Chem. Phys., 2025, 163, 054117 Search PubMed.
  38. I. Widmann, G. Kinik, M. Jähnig, R. Glaum, M. Schwarz, C. Wüstefeld, D. Johrendt, M. Tribus, C. Hejny, L. Bayarjargal, L. Dubrovinsky, G. Heymann, M. Suta and H. Huppertz, Adv. Funct. Mater., 2024, 34, 2400054 Search PubMed.
  39. B. Ratzker, A. Wagner, B. Favelukis, S. Goldring, S. Kalabukhov and N. Frage, J. Eur. Ceram. Soc., 2021, 41, 3520–3526 Search PubMed.
  40. R. M. F. Scalvi, M. S. Li and L. V. Scalvi, Phys. Chem. Miner., 2005, 31, 733–737 Search PubMed.
  41. W. Harrison, Electronic Structures and the Properties of Solids: The Physics of the Chemical Bond, Freeman Co, San Francisco, 1980 Search PubMed.
  42. P. Löwdin, Int. J. Quantum Chem., 1982, 21, 69–92 Search PubMed.
  43. A. Tokmachev and A. Tchougréeff, J. Solid State Chem., 2003, 176, 633–645 Search PubMed.
  44. J. W. Furness, A. D. Kaplan, J. Ning, J. P. Perdew and J. Sun, J. Phys. Chem. Lett., 2020, 11, 8208–8215 Search PubMed.
  45. G. Kresse and J. Furthmüller, Phys. Rev. B:Condens. Matter Mater. Phys., 1996, 54, 11169 Search PubMed.
  46. G. Kresse and D. Joubert, Phys. Rev. B:Condens. Matter Mater. Phys., 1999, 59, 1758 Search PubMed.
  47. G. Kresse and J. Furthmüller, Comput. Mater. Sci., 1996, 6, 15–50 Search PubMed.
  48. P. E. Blöchl, Phys. Rev. B:Condens. Matter Mater. Phys., 1994, 50, 17953 Search PubMed.
  49. J. Heyd, G. E. Scuseria and M. Ernzerhof, J. Chem. Phys., 2003, 118, 8207–8215 Search PubMed.
  50. J. Paier, M. Marsman, K. Hummer, G. Kresse, I. C. Gerber and J. G. Ángyán, J. Chem. Phys., 2006, 124, 154709 Search PubMed.
  51. A. Gali, E. Janzén, P. Deák, G. Kresse and E. Kaxiras, Phys. Rev. Lett., 2009, 103, 186404 Search PubMed.
  52. C. Freysoldt, B. Grabowski, T. Hickel, J. Neugebauer, G. Kresse, A. Janotti and C. G. Van de Walle, Rev. Mod. Phys., 2014, 86, 253–305 Search PubMed.
  53. D. Wang, L. Liu and H. L. Zhuang, J. Appl. Phys., 2021, 130, 225702 Search PubMed.
  54. B. Ramogayana, D. Santos-Carballal, K. P. Maenetja, N. H. De Leeuw and P. E. Ngoepe, ACS Omega, 2021, 6, 29577–29587 Search PubMed.
  55. R. M. Hazen, Phys. Chem. Miner., 1987, 14, 13–20 Search PubMed.
  56. M. Lucht, M. Lerche, H.-C. Wille, Y. V. Shvyd’ko, H. D. Rüter, E. Gerdau and P. Becker, J. Appl. Crystallogr., 2003, 36, 1075–1081 Search PubMed.
  57. R. H. French, J. Am. Ceram. Soc., 1990, 73, 477–489 Search PubMed.
  58. V. Y. Ivanov, V. Pustovarov, E. Shlygin, A. Korotaev and A. Kruzhalov, Phys. Solid State, 2005, 47, 466–473 Search PubMed.
  59. G. Thiering and A. Gali, Phys. Rev. B, 2017, 96, 081115 Search PubMed.
  60. D. C. Cronemeyer, J. Opt. Soc. Am., 1966, 56, 1703 Search PubMed.
  61. H. H. Kusuma, B. Astuti and Z. Ibrahim, J. Phys.: Conf. Ser., 2019, 1170, 012054 Search PubMed.
  62. C. Song, Y. Hang, C. Xia, J. Xu and G. Zhou, Opt. Mater., 2005, 27, 699–703 Search PubMed.
  63. U. Demirbas, A. Sennaroglu and F. X. Kärtner, Opt. Mater. Express, 2019, 9, 3352 Search PubMed.
  64. N. M. Trindade, A. Tabata, R. M. F. Scalvi and L. V. de Andrade Scalvi, Mater. Sci. Appl., 2011, 2, 284 Search PubMed.
  65. A. Bordage, S. Rossano, A. H. Horn and Y. Fuchs, J. Phys.: Condens. Matter, 2012, 24, 225401 Search PubMed.
  66. G. Abbas, O. Bulancea-Lindvall, J. Davidsson, R. Armiento and I. A. Abrikosov, Appl. Phys. Lett., 2025, 126, 154001 Search PubMed.
  67. V. Ivády, I. A. Abrikosov, E. Janzén and A. Gali, Phys. Rev. B:Condens. Matter Mater. Phys., 2013, 87, 205201 Search PubMed.

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