Optoelectronic synaptic devices based on solution-processed microcrystal indium gallium zinc oxide for neuromorphic computing and visual perception

Abstract

The development of artificial synapses capable of emulating biological synaptic functions is crucial for advancing neuromorphic computing. Here, we present a solution-processed microcrystal indium gallium zinc oxide (m-IGZO)-based optoelectronic synaptic device that demonstrates remarkable capabilities in mimicking both short-term and long-term memory behaviors. By precisely tuning the molar ratios of In, Ga, and Zn in the m-IGZO composition, we achieve devices with distinct optoelectronic properties, enabling applications in visual perception and memory. The In-rich (In↑) devices exhibit superior synaptic plasticity, with controllable current modulation under ultraviolet (UV) light stimulation, while Ga-rich (Ga↑) devices show rapid response times, making them ideal for UV detection and communication. We further demonstrate the integration of these devices into a 3 × 3 array, successfully emulating human visual memory and perception. This work highlights the potential of solution-processed m-IGZO devices for low-cost, large-area neuromorphic computing and artificial visual systems.