I.-Lun Jen*ab,
Wan-Ting Chiu*c,
Li-Yan Leec,
Kuang-Kuo Wangd,
Masaki Taharae,
Hideki Hosodae and
Hsin-Jay Wu
*af
aDepartment of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
bDepartment of Chemical and Materials Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan
cSchool of Materials and Chemical Technology, Institute of Science Tokyo, Tokyo 152-8550, Japan
dDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
eLaboratory for Future Interdisciplinary Research of Science and Technology & Materials and Structures Laboratory, Institute of Integrated Research (IIR), Institute of Science Tokyo, Yokohama 226-8501, Japan
fInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106319, Taiwan
First published on 20th January 2026
Achieving both deformability and high efficiency in thermoelectric materials (TEs) remains challenging, as most high-performance TEs are inherently brittle and rely on toxic tellurium. We demonstrate that off-stoichiometry in silver chalcogenides intrinsically tailors both transport and mechanical properties, enabling enhanced and bendable TEs without extrinsic doping. Adjusting the Ag–Se stoichiometry to yield Ag2Se1.04 (SeAg2Se) and Ag2.02Se (AgAg2Se) reveals a strong correlation among defect chemistry, structural stability, and mechanical adaptability. Notably, SeAg2Se sustains a compressive strain of up to 15% before fracture, underscoring its exceptional bendability. This ductile behavior originates from nanoscale Se inclusions that serve as internal stress relievers and phonon scatterers, leading to an ultralow lattice thermal conductivity of 0.3 W m−1 K−1 (480 K) and an enhanced zT of 0.7, indicative of a soft yet efficient thermoelectric material. The SeAg2Se single-leg outperforms its AgAg2Se counterpart, underscoring its potential as a tellurium-free thermoelectric generator (TEG). In addition, SeAg2Se demonstrates excellent cooling capability, achieving a maximum temperature difference of 49.1 K, comparable to that of commercial Bi2Te3. Intrinsic stoichiometric control provides a sustainable design strategy, where self-doping bridges mechanical toughness and thermoelectric efficiency, paving the way for durable, tellurium-free energy devices.
In response, a new category of flexible thermoelectrics has emerged. Organic–inorganic composites have demonstrated remarkable stretchability and mechanical compliance9 but often at the expense of thermoelectric performance. By contrast, fully inorganic systems exhibit intrinsic ductility while retaining moderate efficiency; notable among them are tellurium-free Ag2Se-based alloys.10 Ag2Se has been recognized for decades as a promising room-temperature thermoelectric material, yet bulk cooling or generator devices remain rare. The primary obstacle lies in its first-order phase transition near 400 K, which complicates device design by strongly affecting its transport properties.
Given that Ag2Se-based alloys are inherently more ductile than conventional thermoelectrics,11 the key challenge is to further enhance their zT. Because zT depends on both the PF and κ, optimization is inherently difficult due to their coupled nature. Extrinsic doping with foreign elements has long been the dominant approach for tuning carrier concentration,12,13 but this strategy risks altering the chemical environment of the host lattice and inducing undesirable strain. Here, we adopt an intrinsic approach by adjusting the Ag
:
Se stoichiometric ratio, enabling controlled carrier modulation without external dopants. Three silver chalcogenides were synthesized—Ag2Se, Ag2Se1.04 (SeAg2Se), and Ag2.02Se (AgAg2Se)—which, when superimposed on the Ag–Se phase diagram, fall in the Ag2Se, Se + Ag2Se, and Ag + Ag2Se phase regions, respectively. Despite their minor compositional differences, these alloys display strikingly distinct mechanical responses under compression: SeAg2Se achieves an optimal balance, combining precipitation hardening (which enhances compressive strength) with a dual-phase microstructure in which soft Se precipitates improve elongation relative to intrinsic Ag2Se. To further probe mechanical behavior across the phase transition, we performed the first strain–temperature (S–T) measurements on this ductile system under a constant external load during heating. Remarkably, intrinsic doping altered the strain response, shifting from plasticity-like in Ag2Se and SeAg2Se to elasticity-like & pseudo-reversible behavior in AgAg2Se as the phase transition was crossed.
Together with the improved thermoelectric performance identified in SeAg2Se, these results demonstrate that subtle intrinsic doping not only enhances zT but also resolves the long-standing trade-off between mechanical strength and ductility. This work establishes a direct correlation between mechanical properties and thermal–electrical transport, laying the groundwork for the design of high-performance, flexible, and ductile thermoelectric generators and coolers.
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| Fig. 1 Phase evolution and mechanical response of Ag2Se-based alloys. (a) Enlarged Ag–Se phase diagram10,14 showing the nominal compositions of Ag2Se, Se-rich Ag2Se1.04 (SeAg2Se), and Ag-rich Ag2.02Se (AgAg2Se), marked as open triangles. The inset shows a schematic illustration of the SeAg2Se and AgAg2Se lattices, where excess Se or Ag may occupy interstitial sites. (b) Compression stress–strain curves of the three alloys, with small cross symbols marking specimen failure. The inset shows a schematic and an optical image of the specimen before and after compression. (c) Temperature-dependent strain curves of Ag2Se, Se-rich Ag2Se1.04, and Ag-rich Ag2.02Se recorded upon heating from room temperature RT to 423 K and then cooling back to RT. | ||
The compression stress–strain curves of Ag2Se, SeAg2Se, and AgAg2Se at room temperature exhibit markedly different responses. For a more quantitative comparison, the 0.2% yield stress σ0.2, maximum stress σmax, and elongation at fracture ε were extracted and are summarized in Table 1. Remarkably, even slight deviations from stoichiometry, whether Ag-rich or Se-rich, substantially enhance σ0.2, σmax, and ε compared to pristine Ag2Se. Moreover, SeAg2Se exhibits a balanced σ–ε response, given that it possesses the largest ε with enhanced σ0.2 and σmax compared to pristine Ag2Se. By contrast, the Ag-rich sample exhibits the highest σmax but sacrifices part of its elongation relative to SeAg2Se.
| Sample | σ0.2 (Mpa) | σmax (Mpa) | ε (%) |
|---|---|---|---|
| SeAg2Se | 36.9 | 62.4 | 15.1 |
| Ag2Se | 8.6 | 10.2 | 6.9 |
| AgAg2Se | 39.6 | 66.6 | 9.9 |
After compression to failure, microstructural characterization studies were conducted on Ag2Se, SeAg2Se, and AgAg2Se specimens, examining side views parallel to the loading direction (Fig. S1a–f). For stoichiometric Ag2Se and AgAg2Se, river-like features were observed on the side views (Fig. S1b and d). In Ag2Se, layered cleavage facets appeared, revealing a relatively brittle fracture feature, whereas the AgAg2Se sample (Fig. S1a) exhibited a nearly crack-free surface after compression. In contrast, the SeAg2Se specimen displayed a distinct twin-like (pseudo-twin) microstructure, highlighted by a yellow square (Fig. S1e and f), which may account for its superior mechanical robustness. These distinct deformation responses among Ag2Se-based specimens can thus be attributed to compression-induced mechanical twinning15 and compositional segregation arising from off-stoichiometry.16
However, systematic studies on the deformation mechanisms of Ag2Se-based thermoelectrics remain scarce, and further work is needed to elucidate their mechanical response and microstructural evolution.
To further examine the dynamic mechanical response across the phase transition, temperature-dependent compression experiments were carried out by heating the specimen under a constant load while recording the strain. This setup, schematically shown in the inset of Fig. 1c is designed to explore the deformation behavior of phase-transition thermoelectric materials, exemplified here by Ag2Se-based alloys, under the temperature gradients typically encountered in thermoelectric generators or coolers. Here, we define the temperature-dependent constant-load strains as S–T curves. As shown in Fig. 1c, positive strain denotes compression, while negative strain indicates expansion. S–T curves of Ag2Se, SeAg2Se, and AgAg2Se were recorded between room temperature and 423 K under a constant compressive stress of 2 MPa, and subsequently upon cooling, to evaluate shape deformation and recovery. Focusing on the heating S–T curves of Ag2Se and SeAg2Se (Fig. 1c), both alloys exhibited pronounced deformation upon cooling, indicating reduced yield strength and plastic flow. Below 400 K, the strain stabilized as strength recovered (Fig. S3). While SeAg2Se exhibits behavior similar to Ag2Se, its phase transition is marked by a higher compressive response, likely arising from the combined effects of Se evaporation and the α–β transition.
By contrast, AgAg2Se shows distinct S–T curves, with minor deformation during heating, shape recovery upon cooling, and clear thermal hysteresis. The slight initial expansion likely arises from the jig of the universal testing machine or the thermal expansion of α-Ag2Se. Following the slight expansion, a pronounced tensile response emerged near 403 K, with deformation saturating at ∼1% strain as the phase transition completed. On cooling, AgAg2Se recovered its shape with minor hysteresis and negligible plastic deformation strain, reflecting a higher yield stress than that of Ag2Se and SeAg2Se. To further probe their mechanical stability, S–T tests were extended to 500 K (Fig. S3). The results closely match those in Fig. 1c; AgAg2Se specimens retained excellent mechanical integrity at elevated temperature, whereas Ag2Se and SeAg2Se exhibited pronounced plastic deformation due to reduced strength and dislocation slip.
These results reveal that self-doping has a marked influence on the mechanical response, and to the best of our knowledge, represent the first report of high-temperature strain behavior in semiconducting silver chalcogenides. The temperature-dependent σ, S, and κ are likewise strongly affected by defect types, which are typically governed by self-doping. As shown in Fig. 2a–f, the temperature-dependent thermoelectric properties differ significantly among AgAg2Se, Ag2Se, and SeAg2Se, despite their similar chemical compositions. Discontinuities observed across the phase transition arise from limitations of the measurement techniques; therefore, data within the transition region are omitted.
In the temperature range of 300–418 K, the σ(T) and S(T) curves of AgAg2Se and Ag2Se are nearly identical, whereas SeAg2Se exhibits a lower σ(T) and a higher S(T), as shown in Fig. 2a and b. This distinction aligns with the carrier concentration nH, as shown in Table S1, where AgAg2Se and Ag2Se share a comparable nH of 4 × 1018 cm−3, but SeAg2Se exhibits a slightly lower nH of 3 × 1018 cm−3 at 300 K, leading to its larger S(T) and smaller σ(T). In contrast, upon entering the high-temperature β phase (above 418 K), SeAg2Se and Ag2Se converge to a low σ(T), whereas AgAg2Se retains a distinctly higher σ(T).
A similar “grouping” trend is evident in S(T) (Fig. 2b), where AgAg2Se resembles Ag2Se before the phase transition, but SeAg2Se converges toward Ag2Se after entering the β phase. Despite their distinct σ(T) and S(T) behaviors, all three samples exhibit similar power factors (S2σ) owing to the S–σ trade-off, forming a plateau near 2.5 W m−1 K−2. Upon the α–β transition, the PF decreases abruptly, with β-Ag2Se retaining merely 20–40% of the α-phase value.
Attention is now directed to the thermal transport behavior. The total thermal conductivity κT (Fig. 2e), directly correlated with the heat capacity Cp (Fig. 2d) and experimentally-determined thermal diffusivity D (Fig. S4), can be separated into lattice κL and electronic κe components. Notably, AgAg2Se exhibits the highest heat capacity, reaching Cp = 0.284 J g−1 K−1 at 323 K, followed by Ag2Se (Cp = 0.275 J g−1 K−1) and SeAg2Se (Cp = 0.261 J g−1 K−1). In the α phase region of Ag2Se, Cp(T) gradually increases with temperature, whereas the temperature dependence becomes nearly flat after the transition to the β phase. A similar trend is observed in the total thermal conductivity κT and its lattice contribution κL, as shown in Fig. 2e. Within the α phase region, all Ag2Se based alloys exhibit low-lying κL(T), with SeAg2Se reaching as low as 0.3 W m−1 K−1 at 480 K. This value is significantly lower than that of the other alloys (κL greater than 0.7 W m−1 K−1), suggesting that additional phonon scattering arises from self-doping in SeAg2Se compared with the intrinsic composition. Because phonons are typically scattered by defects in bulk materials, nanoscale structural characterization using TEM is essential to confirm the origin of this enhanced scattering. Overall, SeAg2Se delivers an enhanced power factor PF(T) together with a markedly reduced thermal conductivity κ(T), yielding the highest zT values across the entire measured temperature range (Fig. 2f).
It is evident that self-doping induces significant changes in the transport properties; however, the underlying mechanism remains unresolved. To clarify this, transmission electron microscopy (TEM) analyses were performed on Ag2Se and SeAg2Se alloys. As shown in Fig. S5b, the high-resolution TEM (HRTEM) image of Ag2Se reveals well-defined lattice fringes without any apparent lattice defects. Indexing of the corresponding selected-area electron diffraction (SAED) pattern (Fig. S5a) identifies the [
01] zone axis of Ag2Se, while the inverse fast Fourier transform (IFFT) image (Fig. S5c) from the region marked in Fig. S5a further confirms the absence of crystallographic imperfections in pristine Ag2Se. Focusing on the structural characterization of SeAg2Se, Fig. 3a shows the synchrotron-based powder X-ray diffraction (PXRD) pattern collected at ambient temperature. Rietveld refinement using Ag2Se as the reference phase fits the experimental profile well, yielding a satisfactory agreement with an Rwp value of 5.792%. The PXRD patterns for SeAg2Se and Ag2Se are shown in Fig. S6 and exhibit excellent agreement with the reference phases.
Furthermore, the in situ synchrotron PXRD measurements conducted between 300 K and 450 K unambiguously confirm the α–β phase transition at approximately 418 K (Fig. 3b). Both room-temperature and variable-temperature PXRD results reveal no evidence of secondary phases, indicating the phase purity of SeAg2Se at the macroscopic scale.
At the nanoscale, however, transmission electron microscopy (TEM) and scanning TEM (STEM) reveal distinct structural features, as shown in Fig. 3c–h. A magnified bright-field (BF) TEM image (Fig. 3c) displays pebble-like precipitates embedded within the matrix, producing pronounced Moiré fringes. The corresponding SAED pattern (Fig. 3f), acquired from the same measured region of Fig. 3c, can be indexed to the [100] zone axis of Ag2Se, and it exhibits continuous arc-shaped diffraction spots at higher orders, signifying substantial lattice strain within the matrix. Moreover, by performing a fast-Fourier transform (FFT) from the region marked in Fig. 3e, one can conclude that the pebble-like precipitate has an equivalent diameter of approximately 30 nm(Fig. 3d). Furthermore, when the FFT (Fig. 3e) is applied to the pebble-like precipitate, the resultant diffraction pattern can be indexed to a single structure of Se oriented along the [2![[1 with combining macron]](https://www.rsc.org/images/entities/char_0031_0304.gif)
] axis, suggesting that the precipitate could be of the Se phase.
The local IFFT image (Fig. 3e) further reveals a high density of dislocations and low-angle grain boundaries. These nanoscale defects collectively lead to strain hardening, as confirmed by the GPA strain mapping (Fig. 3g), which highlights pronounced lattice distortions arising from dislocation accumulation and the resultant residual stress. The improved ductility is likely associated with dislocation motion accommodated along the interfaces between Se precipitates and the Ag2Se matrix. Moreover, the pronounced lattice distortions revealed by GPA indicate substantial local strain fields associated with dislocation accumulation. Such strain fields are expected to enhance phonon scattering, providing a plausible explanation for the reduced κL observed in SeAg2Se. The STEM-HAADF image (Fig. 3h) exhibits numerous dark contrast features, indicative of regions containing elements with lower atomic numbers embedded within an otherwise homogeneous matrix. In conjunction with the corresponding FFT analysis, these dark features are identified as Se-rich nanoprecipitates. However, owing to the limited spatial resolution of the elemental mapping, the Se-rich regions cannot be clearly distinguished from the surrounding Ag2Se matrix in Fig. 3h.
Given that intrinsic self-doping in Ag2Se can modulate carrier concentration and defect chemistry, it is important to determine whether these effects translate into measurable improvements in device performance. To establish a quantitative link between material properties and energy conversion, bulk AgAg2Se and SeAg2Se were fabricated into generator-type single-leg devices using solder and silver paste, as illustrated in the inset of Fig. 4a. The devices were characterized using a commercial mini-PEM setup at variable hot-side temperatures (Th) and a fixed cold-side temperature (Tc), enabling simultaneous measurement of output power (Pout) and heat flow (Qt) (Fig. 4b and c). Notably, the Pout and conversion efficiency are mainly governed by the electronic transport properties of α-Ag2Se, while any β-Ag2Se formed locally near the hot side is limited in extent and is not expected to significantly affect the overall device performance. Under these operating conditions, the mechanical stability of the single leg is well preserved. As shown in Fig. 4b and 2b, below 393 K, SeAg2Se exhibits a higher S, leading to a higher output power compared with AgAg2Se. By contrast, the heat-flow behavior does not exhibit a direct correlation with lattice thermal conductivity, as the measured total heat flow includes contributions from Fourier, Peltier, and radiative heat transfer. Accordingly, the conversion efficiency (Fig. 4a), η = Pout/Qt, was evaluated up to Th = 393 K, just below the α–β transition temperature to avoid mechanical degradation associated with volumetric strain. Notably, SeAg2Se exhibits higher η across the entire temperature range, reaching a peak efficiency of 1.6% and an output power of 5.81 mW (Fig. 4b), both surpassing AgAg2Se.
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| Fig. 4 (a–c) The conversion efficiency, output power (Pout), and heat flow (Qt) of SeAg2Se and AgAg2Se single leg as a function of hot side temperature. (d) Schematic diagram of the Z-meter measurement. (e) Comparison of maximum temperature difference achieved by promising TE materials.17–19 | ||
The α–β transition near 418 K and the accompanying volumetric strain impose intrinsic limitations on Ag2Se-based materials for thermoelectric power generation, where conversion efficiency scales with the temperature gradient. Although SeAg2Se demonstrates reliable performance for small temperature gradient generators, its operational window motivates exploration toward thermoelectric cooling. The cooling capability, quantified by the Z value and the maximum temperature difference (ΔTmax), was evaluated using a commercial Z-meter. A small piece of SeAg2Se was sandwiched between nickel wires at an ambient temperature of 289 K, as schematically shown in Fig. 4d. The ΔTmax, defined as the temperature drop of the cold side relative to 298 K (Fig. 4e and S7), reaches 49.1 K, corresponding to a cold-side temperature of 251.7 K. This value surpasses those of conventional PbTe (13.9 K),17 PbS0.6Se0.4 (36.9 K),18 and even state-of-the-art Bi2Te3 (44.0 K),19 highlighting the exceptional cooling performance of SeAg2Se.
These results indicate that intrinsic self-doping not only optimizes the electronic transport and stabilizes the microstructure under thermal bias but also enhances device-level conversion efficiency, providing a coherent link between defect chemistry, thermoelectric transport, and functional performance.20 Moreover, near-room-temperature thermoelectric materials that combine high performance with mechanical flexibility are increasingly attractive for ambient energy harvesting beyond conventional waste-heat recovery. Recent studies21 have shown that thermoelectrics can surpass hydrovoltaic systems in harvesting energy from water evaporation, owing to their continuous energy conversion and higher power density under ambient conditions. Herein, the mechanical robustness and low-temperature operating window of SeAg2Se further broaden its potential for emerging ambient energy-harvesting applications, underscoring the expanding role of thermoelectrics beyond traditional waste-heat utilization.
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