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Correction: Designing high-performance infrared optoelectronic materials: indium-site substitution in LiInSe2 with Al, Ga, Sn, and Sb
Jiahuan Chena,
Sichen Luob,
Yuqing Yanga,
Yanan Zhangb,
Suwen Hanb,
Pengfei Lub,
Chunlian Xiongc,
Yue Chengc,
Changcheng Chenc and
Xiaoning Guan*a
aInternational School, Beijing University of Posts and Telecommunications, Beijing 100876, China. E-mail: guanxn@bupt.edu.cn
bSchool of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, China
cSchool of Science, Xi'an University of Architecture and Technology, Xi'an 710055, China
First published on 1st April 2026
Abstract
Correction for ‘Designing high-performance infrared optoelectronic materials: indium-site substitution in LiInSe2 with Al, Ga, Sn, and Sb’ by Jiahuan Chen et al., RSC Adv., 2025, 15, 47981–47988, https://doi.org/10.1039/D5RA05215G.
The authors regret that the affiliations for Yanan Zhang and Suwen Han were incorrectly shown in the original manuscript. The correct list of affiliations is as shown here.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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