Open Access Article
K. Ramachandrana,
A. Nirmala Graceb,
George Jacobb,
M. Vijayana,
E. Anbarasana and
R. Ramesh
*a
aDepartment of Physics, Periyar University, Salem-636 011, Tamil Nadu, India. E-mail: rameshphys@gmail.com
bCentre for Nanotechnology Research (CNR), Vellore Institute of Technology (VIT), Vellore, Tamil Nadu 632014, India
First published on 23rd January 2026
The α-Fe2O3 photoanode is an efficient semiconductor material for photoelectrochemical (PEC) water oxidation due to its favorable bandgap, chemical stability, and natural abundance. However, the rapid recombination of photoexcited electrons (e−) and holes (h+) impedes the PEC efficiency. Herein, an α-Fe2O3/ZnWO4 heterojunction photoanode was synthesized by combining hydrothermal and hybrid microwave annealing methods. The α-Fe2O3/ZnWO4 heterojunction photoanode demonstrated a photocurrent density of 0.86 mA cm−2 at 1.23 V vs. RHE, which is more than 2.2 times that of pure ZnWO4 (0.06 mA cm−2) and the α-Fe2O3 photoanode (0.29 mA cm−2). In contrast, the α-Fe2O3/ZnWO4 photoanode exhibited an improved ABPE value of 0.10% at 1.0 V vs. RHE. The significantly improved charge separation efficiency and reduced charge recombination were attributed to hole storage in a ZnWO4 heterojunction layer.
In 1972, the TiO2 semiconductor was first employed by Honda and Fujishima to split water through the PEC system.7 Additional semiconductor materials such as BiVO4,8 TiO2,9 ZnO,10 WO3,11 and α-Fe2O3 (ref. 12) have been investigated for PEC water oxidation. Among them, α-Fe2O3 is an especially promising semiconductor candidate for water oxidizing due to its excellent stability and environmental friendliness, low-cost, and suitable band gap (Eg ≈ 2.1 eV). However, the more practical application of pure α-Fe2O3 is limited by several challenges, including low electron mobility, a short hole-diffusion length (2–4 nm), a low light absorption coefficient resulting from its indirect band gap, and short carrier lifetime. Moreover, the conduction band edge position of a pure α-Fe2O3 photoanode does not align with the reversible hydrogen potential, necessitating a high over-potential for PEC water reduction. Further, the use of an α-Fe2O3 photoanode is more challenging for efficient water oxidation due to its low PEC water oxidation kinetics and inefficient charge separation.
Several approaches have been employed to address the challenges associated with using α-Fe2O3 for PEC water splitting, such as doping,13 nanostructuring photoanodes,14 and the formation of heterojunction photoanodes.15 During the water oxidation reaction, the charge separation of electrode surfaces is promoted by nanostructuring of the α-Fe2O3 photoanode. Various nanostructured forms of α-Fe2O3 have been reported with surface morphologies of nanorods,16 nanotubes,17 nanosheets,18 and nanoflowers.19 One effective method that has been widely used to reduce charge recombination, improve photon absorption, and improve charge separation of α-Fe2O3 for effective PEC water splitting is the development of heterojunction structures.
For example, Alotaibi et al. reported an α-Fe2O3/TiO2 heterojunction photoanode created by a chemical vapour deposition method that significantly enhanced PEC water splitting performance.20 The photocurrent density of WO3 increases by more than a factor of nine upon coupling with α-Fe2O3, as reported by Mao et al.21 In addition, Xia et al. demonstrated that α-Fe2O3/BiVO4 heterojunction photoanodes greatly enhanced PEC performance.22 Another promising approach for improvement of charge separation is the formation of n–n type heterostructures, which can facilitate more optimal charge transport properties and separation as well as limit electron/hole (e−/h+) recombination. Recently, n–n type heterostructures such as CdS/FST,23 BiVO4/CdS,24 WO3/Fe2O3,25 and WO3/ZnWO4 have been used for PEC water splitting.26
Among the various n–n type heterostructure semiconductors, ZnWO4 has emerged as an attractive second semiconductor due to its suitable conduction band position, satisfactory electron mobility, and excellent chemical stability. In particular, because of its high stability in acidic and alkaline media, along with strong interfacial superior compatibility with oxide semiconductors, ZnWO4 is highly suitable for constructing heterojunction photoanodes.27,28 For example, the formation of a WO3/ZnWO4 heterojunction photoanode is effective for increasing the visible light absorption and charge separation efficiency because ZnWO4 possesses a wide range of band gaps, Eg ≈ 3.2–3.8 eV.29–31 Moreover, these synthesis methods and conventional annealing techniques are complex, and controlling surface morphology is difficult.32
Conventional thermal annealing often leads to severe crystal sintering and damage to the fluorine-doped tin oxide (FTO) glass substrate. In contrast, hybrid microwave annealing enables high-temperature crystallization while effectively suppressing sintering and preserving FTO integrity, as demonstrated for Fe2O3, CuFeO2, CuO, ZnFe2O4, and Fe2TiO5.33,34 There are very few research articles available on photoelectrode preparation using an easy and inexpensive synthesis procedure for PEC water splitting applications.
In this research, we employed an α-Fe2O3/ZnWO4 heterojunction photoanode prepared by the simple method of hydrothermal treatment with a hybrid microwave annealing approach, and the improvement of PEC water oxidation resulting from the formation of an α-Fe2O3/ZnWO4 heterostructured photoanode was systematically studied. The recorded research shows that the α-Fe2O3/ZnWO4 heterojunction photoanode reached maximum photocurrent density at the potential of 1.23 V (vs. reversible hydrogen electrode (RHE)) as compared to that of the value recorded for pure α-Fe2O3. The absorption of visible light of α-Fe2O3/ZnWO4 was redshifted as compared to that of α-Fe2O3. This resulted in enhanced visible spectrum photon absorption, which in turn affected the increase in photocurrent density attained for the α-Fe2O3/ZnWO4 heterojunction photoanode. Also, the formation of the α-Fe2O3/ZnWO4 heterojunction photoanode produced an additional electric field at the n–n junction that was greatly decreased by the recombination of electron–hole pairs and facilitated the mobility of photoexcited charge carriers. The morphology of ZnWO4 deposited on α-Fe2O3 to form the heterostructure was bundled nanosheets, which played an important role in increasing charge separation, and consequently increased the applied bias photon-to-current efficiency (ABPE). To the best of our knowledge, we report for the first time the synthesis of an α-Fe2O3/ZnWO4 n–n heterojunction photoanode by a hybrid microwave annealing technique. The overall PEC water oxidation performance of the α-Fe2O3/ZnWO4 n–n heterojunction is discussed in the results and discussion section.
The electrochemical impedance spectroscopy (EIS) study was performed with a frequency range of 1–100 kHz. During the PEC measurements, the working electrode potential (vs. Ag/AgCl) was changed to be a scale of the RHE using the Nernst equation:35,36
| ERHE = EAg/AgCl + 0.059 (pH) + E0Ag/AgCl | (1) |
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| Fig. 2 FESEM images of (a) α-Fe2O3, (b) Zn 550, and (c) α-Fe2O3/ZnWO4, (d) EDS spectrum and (e–h) HR-TEM images of the α-Fe2O3/ZnWO4 heterostructure. | ||
This morphology suggests successful integration of both materials, which promotes the formation of heterojunctions favorable for enhanced charge separation and transport. Furthermore, the elemental composition was verified through EDS analysis (Fig. 2d), which confirmed the presence of Fe, Zn, W, and O, thus supporting the formation of the α-Fe2O3/ZnWO4 heterostructured photoanode. The Sn signal originates from the FTO substrate. The absence of any impurity peaks indicates the high purity of the prepared heterostructure. The quantitative analysis of the composition is listed in Table 1.
| Composition | Sn | O | Fe | Zn | W |
|---|---|---|---|---|---|
| Weight% | 33.01 | 34.08 | 10.33 | 3.66 | 18.92 |
| Atomic% | 10.11 | 77.40 | 6.72 | 6.72 | 3.74 |
To increase our understanding of the structure of α-Fe2O3/ZnWO4, its microstructural features were examined by transmission electron microscopy (TEM), as shown in Fig. 2e and f. The low-magnification TEM image (Fig. 2e) demonstrates that the composite consists of aggregated nanostructures with intimate interfacial contact between the two semiconductors. The high-magnification TEM image (Fig. 2f) further reveals closely packed heterostructured domains at the nanoscale, indicating satisfactory dispersion of ZnWO4 within the α-Fe2O3 matrix. Noticeably, the high-resolution transmission electron microscopy (HRTEM) image (Fig. 2g) shows well-resolved lattice fringes with interplanar spacings of 0.253 nm and 0.241 nm, which can be indexed to the (110) plane of α-Fe2O3 and the (021) plane of ZnWO4, respectively. This clearly confirms the interface between the Fe2O3 nanorods and the ZnWO4 heterojunction.
The corresponding SAED pattern (Fig. 2h) exhibits a series of concentric diffraction rings composed of bright spots, demonstrating the polycrystalline nature of the heterojunction. The diffraction rings can be indexed to the characteristic crystal planes of α-Fe2O3 and ZnWO4, which is in agreement with the XRD results and further confirms the existence of both crystalline phases. Thus, it is evidenced that the formation of the α-Fe2O3/ZnWO4 heterojunction occurred.
The XRD patterns of ZnWO4, α-Fe2O3, and the α-Fe2O3/ZnWO4 heterojunction are shown in Fig. 3. Fig. 3a shows the XRD patterns of FTO, and ZnWO4 synthesized at 500 °C (Zn 500), 550 °C (Zn 550), and 600 °C (Zn 600). The most prominent high-intensity peaks marked with red asterisks (*) appear from the FTO substrate related to the SnO2 characteristic peaks, while the peaks corresponding to monoclinic ZnWO4 are denoted by black hearts (♥). Among the three, the ZnWO4 sample annealed at 550 °C (Zn 550) exhibits the sharpest and most intense ZnWO4 diffraction peaks, indicating enhanced crystallinity compared to the 500 °C and 600 °C samples.
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| Fig. 3 XRD patterns of (a) ZnWO4 annealed at different temperatures and the (b) Zn 550, α-Fe2O3, and α-Fe2O3/ZnWO4 heterojunction photoanodes. | ||
The lower crystallinity at 500 °C is due to incomplete phase formation, while peak broadening at 600 °C is due to thermally induced lattice strain. Hence, 550 °C is the optimal annealing temperature for ZnWO4. The major diffraction peaks of ZnWO4 appear at 15.43°, 18.75°, 23.9°, 31.2°, 36.2°, 47.7°, 48.7°, and 68.2°, which correspond to the (010), (100), (001), (020), (021), (030), (022), and (041) crystal planes, respectively. These peaks match well with the standard data for ZnWO4, confirming its formation in the monoclinic crystal system (JCPDS: 15-0774).37
As for α-Fe2O3, there are two diffraction peaks located at 35.6° and 64.2°, which correspond to the (110) and (300) planes of the rhombohedral crystal phase of α-Fe2O3 (JCPDS: 33-0664) (Fig. 3b).31 In the α-Fe2O3/ZnWO4 heterojunction, peaks for ZnWO4 and α-Fe2O3 are observed, indicating successful formation of the heterojunction. However, the disappearance of the low-intensity ZnWO4 peak at 15.43° in the heterojunction photoanode is due to the reduced crystallite size, interfacial strain, and partial peak overlap with α-Fe2O3, all of which suppress its detectability.
UV-visible spectroscopy was performed to understand the light-absorption mechanisms of the α-Fe2O3/ZnWO4 heterojunction photoanode, which ranges in wavelength from 400 to 800 nm (Fig. 4a). It is clearly shown that the light absorption edge of the α-Fe2O3/ZnWO4 photoanode significantly redshifted when compared to ZnWO4 and α-Fe2O3, which is due to the formation of the heterojunction.38,39 The bandgap can be estimated using a Tauc plot, which is shown in Fig. 4b. According to the Tauc result, the band gap of monoclinic ZnWO4 was estimated to be 3.2 eV, while that of α-Fe2O3 was 2.02 eV. The α-Fe2O3/ZnWO4 heterojunction exhibited a slightly increased band gap of 2.2 V, indicating a shift due to the interfacial electronic interaction between the two semiconductors.29,31
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| Fig. 4 (a) UV-Vis spectrum and (b) Tauc plot of the ZnWO4, α-Fe2O3, and α-Fe2O3/ZnWO4 heterojunction photoanodes. | ||
X-ray photoelectron spectroscopy (XPS) was conducted to examine the elemental composition and chemical states of the α-Fe2O3/ZnWO4 heterojunction photoanode. The survey spectrum (Fig. 5a) confirms the presence of Fe, Zn, W, O, and Sn elements, revealing the successful composition of the heterojunction. In Fig. 5b, the high-resolution Fe 2p spectrum exhibits two prominent peaks corresponding to Fe 2p3/2 and Fe 2p1/2, located at 710.2 eV and 724.21 eV, respectively.
It is well known that the core-level binding energy of an element increases with an increasing valence (oxidation) state, due to the enhanced effective nuclear charge experienced by the core electrons. In the case of iron oxides, this trend is clearly reflected in the Fe 2p spectra. The Fe 2p3/2 binding energy is typically located at approximately 709 eV for Fe2+ species, while it shifts to higher binding energies (710–711 eV) for Fe3+ species. In the present α-Fe2O3/ZnWO4 photoanode, the Fe 2p3/2 peak appears at 710.2 eV. In addition, the binding energy of a distinct shake-up satellite peak was observed at 718.6 eV, which is fully consistent with the Fe3+ oxidation state in the α-Fe2O3 phase, as previously reported.40
The O 1s spectrum (Fig. 5c) shows two deconvoluted peaks at 530.24 eV and 531.4 eV.39 The lower binding energy peak was attributed to lattice oxygen (O2−), while the higher binding energy peak was attributed to surface-adsorbed oxygen or hydroxyl species. Surface oxygen species are beneficial for PEC activity by favoring charge separation and surface reaction.
The W 4f spectrum (Fig. 5d) shows peaks at 35.1 eV and 37.3 eV, which were attributed to W 4f7/2 and W 4f5/2, respectively. The two peaks are associated with the photoelectrons emitted from W atoms in the W6+ oxidation state, which agrees with the report of ZnWO4. Furthermore, there was a spin orbit separation of approximately 2.2 eV, which is consistent with W6+ species in ZnWO4. No additional peaks corresponding to reduced tungsten species (W5+ or W4+) were detected, suggesting that tungsten exclusively exists in the W6+ oxidation state. This confirms the formation of stoichiometric ZnWO4 and its stable integration with α-Fe2O3. Fig. 5e displays the Zn 2p spectrum, which includes two peaks at 1021.3 eV and 1044.4 eV, corresponding to Zn 2p3/2 and Zn 2p1/2, respectively. The peaks indicate the 2+ oxidation state of Zn in ZnWO4. The existence of a distinct Zn 2p peak also supports the successful integration of ZnWO4 with α-Fe2O3.41
The PEC behavior and interfacial charge transport properties of Zn 550, α-Fe2O3, and their heterojunction (α-Fe2O3/ZnWO4) were systematically evaluated, and are shown in Fig. 6. Fig. 6a shows the photocurrent density (J–V) curves for ZnWO4 thin films annealed at different temperatures (500 °C, 550 °C, and 600 °C). The ZnWO4 sample annealed at 550 °C exhibited the highest photocurrent density, indicating an optimal crystalline structure and enhanced photoactivity at this temperature. Fig. 6b shows the photocurrent response of pristine Zn 550, pristine α-Fe2O3, and their heterostructure (α-Fe2O3/ZnWO4) under solar illumination. Among the three, the heterojunction exhibited significantly enhanced photocurrent density, reaching 0.86 mA cm−2 at 1.23 V vs. RHE, which is much higher than pristine α-Fe2O3 (0.29 mA cm−2) or Zn 550 (0.05 mA cm−2), while the corresponding photocurrent measurements recorded in the presence of H2O2 are provided in Fig. S1. This is due to the enhanced charge separation and decreased recombination caused by the favorable band alignment in the heterojunction.
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| Fig. 6 (a) LSV plots of ZnWO4 annealed at different temperatures. (b) LSV plots. (c) Charge injection and (d) charge separation of the Zn 550, α-Fe2O3, and α-Fe2O3/ZnWO4 heterojunction photoanodes. | ||
The black solid circle shows that the dark current of α-Fe2O3 and α-Fe2O3/ZnWO4 is steady and approximately zero. These indicate that the photoexcited carriers are crucial to the generation of photocurrent, and the α-Fe2O3/ZnWO4 heterojunction obviously enhanced the photoexcited carriers, which significantly accelerated the PEC water oxidation.42 Table S1 summarizes the α-Fe2O3-based heterojunction photoanodes and their corresponding PEC performance (photocurrent density at 1.23 V vs. RHE mA cm−2). Furthermore, the efficiency of charge injection (ƞinj) and charge separation (ƞsep) were determined by the following formulas:43,44
| ƞinj = JH2O/JH2O2 | (2) |
| ƞsep = JH2O2/Jabs | (3) |
Fig. 6c presents the calculated charge injection efficiency as a function of applied potential. The α-Fe2O3/ZnWO4 photoanode showed the highest injection efficiency across the entire potential range, peaking at approximately 66.16% at 1.2 V vs. RHE. This suggests that the heterostructure facilitates more efficient hole transfer from the semiconductor to the electrolyte compared to the individual components. Hence, the satisfactory interface injection between α-Fe2O3/ZnWO4 and the electrolyte significantly accelerated the water oxidation process. The charge separation of α-Fe2O3/ZnWO4 reached 42.51% at 1.23 V vs. RHE, which is more than that of α-Fe2O3 (28.30%) and Zn 550 (17.82%), as shown in Fig. 6d. These results confirm that the formation of a heterojunction effectively suppresses bulk recombination and improves carrier mobility.45,46
As shown in Fig. 7a, the calculated ABPE value of the α-Fe2O3/ZnWO4 heterojunction photoanode is higher than that of the pure Zn 550 and α-Fe2O3 photoanodes (Table 2). The results demonstrate that the separation efficiency of the α-Fe2O3/ZnWO4 heterojunction has significantly improved, with greater solar conversion efficiency for PEC water oxidation. The following ABPE calculations were obtained according to previously reported work.47,48
| Photoanode material | ƞinj (%) | ƞsep (%) | ABPE (%) |
|---|---|---|---|
| Zn 550 | 6.45 | 17.82 | 0.033 |
| α-Fe2O3 | 43.82 | 28.30 | 0.060 |
| α-Fe2O3/ZnWO4 | 66.13 | 42.51 | 0.10 |
A long-term chronoamperometry test for over 50
000 seconds for α-Fe2O3/ZnWO4 under constant illumination shows a stable photocurrent density of approximately 0.86 mA cm−2, with minimal decay (Fig. 7b). This result confirms the structural stability and resistance to photocorrosion of the heterostructure, which is critical for practical PEC applications.49 Furthermore, the reproducible and rapid photocurrent response observed during chopped light on/off conditions demonstrates the fast charge separation and transport, as well as the satisfactory photoresponse reversibility of the α-Fe2O3/ZnWO4 photoanode, as shown in Fig. S2.50
Further insight into the interfacial charge-transfer kinetics of the Zn 550, α-Fe2O3, and α-Fe2O3/ZnWO4 heterojunctions was obtained by electrochemical impedance spectroscopy (EIS) measurements with fixed bias potential and frequency of 1 Hz to 100 kHz. The charge-transfer resistance and capacitance values of the Zn 550, α-Fe2O3, and α-Fe2O3/ZnWO4 heterojunction photoanodes were fitted by the EIS data using an equivalent circuit model (Z fit model), as shown in Fig. 7c, and their corresponding equivalent circuit is shown in the inset in Fig. 7c.51,52
In this Z fit model, Rs denotes all the series resistance in the PEC cell, including the resistance of the FTO substrate.53 The Rtrap denotes the charge trapping resistance in the bulk semiconductor photoelectrode, and Rct represents the charge-transfer resistance across the bulk/electrolyte interface.54 In addition, Cbulk and Ctrap reflect the space-charge capacitance of the bulk and Helmholtz capacitance at the photoanode/electrolyte interface, respectively.55 However, the fitting values of Rtrap and Rct for the α-Fe2O3/ZnWO4 heterojunction photoanode are significantly decreased (Table 3) compared to those of the pristine α-Fe2O3 and ZnWO4 photoanodes, which indicates that the surface trapping and transfer of photogenerated holes in the α-Fe2O3/ZnWO4 heterojunction photoanode is much easier than that in the α-Fe2O3 and ZnWO4 photoanodes. The EIS results clearly demonstrate the formation of the ZnWO4 heterojunction on α-Fe2O3, which can significantly promote the surface charge transfer during the water oxidation reaction and accelerate the separation of (e−)/(h+).
The Mott–Schottky plots of the α-Fe2O3 and α-Fe2O3/ZnWO4 heterojunction photoanodes were created to understand the semiconductor type (Fig. 7d). The carrier density and flat band potential were calculated using the Mott–Schottky equation:56,57
| 1/C2 = 2/ε ε0 eND [(V–VFB) − kT/e)] | (4) |
| Photoanode | Rs (ohm cm−2) | R2 (ohm cm−2) | Rct (ohm cm−2) | C1 (µF cm−2) | C2 (µF cm−2) |
|---|---|---|---|---|---|
| Zn 550 | 36.8 | 860.3 | 645.2 | 0.582 | 4.23 |
| α-Fe2O3 | 35.13 | 532.9 | 290.1 | 0.825 | 5.38 |
| α-Fe2O3/ZnWO4 | 30.19 | 143.1 | 52.8 | 3.783 | 15.26 |
| Photoanode | Donor density (cm−3) | Flatband potential |
|---|---|---|
| Zn 550 | 0.0067 × 109 | 0.30 |
| α-Fe2O3 | 0.152 × 109 | 0.43 |
| α-Fe2O3/ZnWO4 | 0.147 × 1012 | 0.35 |
The proposed charge transfer and reaction mechanism of the α-Fe2O3/ZnWO4 heterojunction photoanode under solar illumination are shown in Fig. 8. Upon light excitation, α-Fe2O3 and ZnWO4 absorb incident photons and generate electron–hole (e−/h+) pairs. Because of the favorable band alignment between α-Fe2O3 (Eg ≈ 2.02 eV) and ZnWO4 (Eg ≈ 3.2 eV), the photogenerated electrons in the conduction band (CB) of ZnWO4 are driven toward the conduction band of α-Fe2O3, while the holes remain in the valence band (VB) of ZnWO4. The CB and VB positions of α-Fe2O3 and ZnWO4 were estimated based on previously reported work.58 The CB and VB edges of α-Fe2O3 are located at +0.37 V and +2.39 V vs. NHE, respectively, with an electron affinity (χ) of approximately 5.88 eV, while ZnWO4 exhibits a CB position at +0.21 V, a VB position at +3.41 V vs. RHE, and an electron affinity (χ) of approximately 6.31 eV.59,60
The accumulated holes on the valence band of ZnWO4 possess sufficient oxidation potential to drive the oxygen evolution reaction (OER), leading to the generation of O2 from water oxidation at the photoanode surface. Simultaneously, the transferred electrons in the conduction band of α-Fe2O3 are transported through the FTO substrate and the external circuit towards the counter electrode, where they participate in the hydrogen evolution reaction (HER) to produce H2. Thus, the formation of the α-Fe2O3/ZnWO4 n–n type heterojunction significantly enhanced the charge separation efficiency, accelerated the interfacial charge transfer, and improved the overall PEC water-splitting performance.
More specifically, the ZnWO4 hole storage layer effectively reduced the transport charge resistance so that holes were stored in the ZnWO4 heterojunction layer, resulting in enhanced electron–hole separation efficiency. This work demonstrates a method for fabricating highly active heterojunction photoanodes by hybrid microwave annealing that is an emerging and noticeably viable route to improve PEC performance.
Supplementary information (SI) is available. See DOI: https://doi.org/10.1039/d5ra07601c.
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