Open Access Article
Manoj Palabathuni
,
Niraj Nitish Patil
,
Suvodeep Sen
,
Geetu Kumari,
Sarah Guerin
and
Shalini Singh
*
Department of Chemical Sciences and Bernal Institute, University of Limerick, Ireland. E-mail: shalini.singh@ul.ie
First published on 30th April 2026
Alloying is a powerful strategy to tailor the electronic structures of 2D transition metal dichalcogenides. Controlling the functionalities is essential to explore the full potential of these ternary nanosheets with tunable electronic properties. Here, Nb was successfully alloyed with W to form ternary NbxW1−xS2 nanosheets with different stoichiometric ratios via colloidal hot-injection synthesis. Incorporation of Nb alters the band structure of parent WS2, allowing for controlled tuning of electronic properties. High resolution transmission electron microscopy reveals an irregular atomic arrangement at higher Nb concentrations, with a notable transition from the pure 2H phase to a mixed 2H–1T′ phase at a controlled concentration of Nb content in the composition. Nb induces a shift of the Fermi level, causing a transition from semiconducting to metallic nature in ternary nanosheets, which facilitates enhanced electrocatalytic activity for the hydrogen evolution reaction (HER) of Nb0.5W0.5S2 compared to pristine WS2.
The electronic properties of TMDs are predominantly determined by their versatile chemical compositions and structural phases. Thus, achieving their full functional potential necessitates deliberate regulation of those electronic properties as a fundamental prerequisite. Unlike most binary TMDs, their tailored ternary counterparts offer an additional degree of control for tailoring electronic and surface properties.10–12 The judicious incorporation of dopants not only expands the structural landscape but also introduces new pathways for electronic modulation.13 Specifically, depending on the choice of metal/chalcogen and their crystal structure, the different localization of atomic d orbitals arising due to the introduction of a third/fourth element is crucial for spatial delocalization of their discrete energy levels. At higher dopant concentrations, this effect results in band gap modification and redistribution of the density of states (DOS).14 Moreover, the intrinsic reduced dimensionality of 2D TMDs further amplifies the effectiveness of such dopant-induced band structure engineering. For instance, bandgap engineering has been well explored in multielement compositions such as MoS2(1−x)Se2x, WS2xSe2(1−x), Mo1−xWxS2, ReS2xSe2(1−x), and MoxW1−xS2ySe2(1−y), by tuning the chemical composition of metal cations and chalcogen anions.15–19
To date, a wide range of metals have been incorporated into WS2 to tailor its electronic and catalytic properties.9,20 Early transition metals such as V and Ta can effectively modulate the carrier concentration. However, their incorporation often induces structural instability. In contrast, late transition metals, e.g., Fe, Co, and Ni, tend to form secondary phases rather than true substitutional alloys.21 In this context, Nb has emerged as one of the effective and widely reported dopant/alloying elements for WS2. Owing to its close atomic size and strong electronic compatibility with W, Nb can be stably incorporated into the WS2 lattice without disrupting the crystal structure. Also, Nb substitution induces controlled p-type doping and optimizes the local electronic environment, directly regulating charge transfer and hydrogen adsorption energies.22–24 Despite these advantages, most ternary and quaternary compositions of TMDs, including Nb-substituted WS2, have been synthesized by using chemical vapour deposition (CVD).25,26 While CVD enables substitution levels exceeding 10% and has demonstrated a clear n- to p-type crossover with metal atoms acting as electron acceptors, the process requires high growth temperatures (>800 °C).27 Such elevated temperatures introduce significant issues in precursor reactivity and volatility, often leading to poor compositional control, inhomogeneous alloying and binary phase separation. These limitations restrict kinetic tunability and hinder the rational design and adoption of these materials in practical applications. Therefore, the design of a general and controllable synthetic strategy remains critical. Compared to high temperature synthesis techniques, the colloidal hot injection synthesis route offers a low temperature chemical route that enables precise stoichiometric control and homogeneous alloying. This synthetic flexibility enables the tunability of the band structures and systematic modulation of electronic properties.28,29
In this study, we report a low-temperature colloidal hot-injection strategy for controlled incorporation of Nb into WS2 nanosheets enabling the synthesis of ternary NbxW1−xS2 over a wide compositional range with precise control of metal stoichiometry. Across all compositions, the experimentally determined metal ratios closely matched the nominal stoichiometry defined by the starting precursor, confirming reliable compositional control. Structural analysis by high-resolution transmission electron microscopy (HRTEM) reveals the composition dependent crystal phase evolution and defect formation induced by Nb substitution, while X-ray photoelectron spectroscopy (XPS) further evidences the corresponding phase transitions. In addition, XPS analysis indicates the formation of sulfur vacancies, and valence band spectra show that increasing Nb content modifies the electronic structures, leading to band restructuring and a reduced bandgap. These coupled structural and electronic modifications lead to a significant enhancement of the electrocatalytic hydrogen evolution reaction (HER) activity of the nanosheets with a mixed phase composition (x = 0.5) in acidic electrolyte. The improved activity is attributed to the increased density of catalytically active sites arising from sulfur vacancies and enhanced charge transfer enabled by Nb-induced band modulation.
The powder X-ray diffraction (XRD) patterns for all ternary compositions are shown in Fig. 1A. Peaks corresponding to x = 0 represent the 2H phase WS2 with lattice constants a = 3.18 Å and c = 12.5 Å, referenced to the JCPDS: 04-016-3255; P63/mmc. Highlighted regions show systematic shifts in (002), (100), (110) and (200) peaks with the gradual increase in x. Compositions with x ranging from 0.1 to 0.5 show a linear shift towards lower 2θ angles, which signifies the progressive lattice expansion with increasing Nb in the samples. This is further corroborated by the a and c lattice constants (shown in Fig. 1(B and C)) that are derived from the peak positions of (100) and (008). The in-plane lattice parameters (a) expand from 3.16 Å (x = 0) to 3.29 Å (x = 0.5) due to a larger ionic radius of Nb5+ (∼0.64 Å) compared to that of W6+ (∼0.60 Å).33 Simultaneously, the out-of-plane parameter (c) contracts from 12.3 Å (x = 0) to 11.85 Å (x = 0.5), likely due to the stronger Nb–S bonding and reduced interlayer spacing.34 However, a deviation from the trend was observed in the samples with x = 0.7 and 0.9, which could be attributed to the non-homogeneous mixing of atoms in the lattice. To ensure that the phase remains unchanged, XRD patterns of the sample (x = 0.5) were recorded before and after annealing at 400 °C. There is no change in the peak position and intensities observed, indicating that the crystal structure and phase composition remain intact (Fig. S3).
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| Fig. 1 (A) XRD patterns of W1−xNbxS2 (x = 0 to 0.9); shaded regions highlight the shift in diffraction planes. (B) Lattice constant a. (C) Lattice constant c. | ||
Transmission electron microscopy (TEM) images of NbxW1−xS2 (x = 0, 0.1, 0.3 and 0.7) with insets of histograms are shown in Fig. 2A. The side view (of sample, x = 0.5) high-resolution TEM image confirms abundant exposed edges shown in Fig. 2B with an interlayer spacing of 0.7 nm (Fig. S4). The elemental mapping was obtained using Energy-Dispersive X-Ray Spectroscopy (EDS) for the x = 0.5 sample (Fig. 2C), confirming the homogeneous distribution of W, Nb and S. The results of the remaining samples (x = 0.1, 0.3, 0.7) are given in Fig. S5. The stoichiometric ratios of elements in all samples were confirmed by X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma atomic emission spectroscopy (ICP-OES) (Table S1). The data indicate that the atomic ratios of metals were almost the same as those of the precursors [W(CO)6]
:
[NbCl5] reflecting positively on the chemical yield of the synthetic approach. The ratio of [S]/[W] + [Nb] is close to 2 for samples with x ≤ 0.7, suggesting that the S vacancies are negligible. However, this ratio decreases at higher x values, indicating sulfur vacancy formation at higher Nb content, as is evident from the XPS and SEM–EDS spectra (supporting Fig. S6–8).
HRTEM analysis of NbxW1−xS2 nanosheets was performed to investigate the structural impact of Nb substitution. Interestingly, the analysis revealed phase transition in the ternary composition. Fig. 3A and B provide an overview of 2H and 1T′ crystal structures, which are known polymorphs of WS2. The 2H phase exhibits a trigonal prismatic coordination with hexagonal symmetry, while the 1T′ phase shows a distorted octahedral coordination with metallic behaviour. The HRTEM image of WS2 shows the arrangement of W and S in a hexagonal ring pattern matched with the overlaid ball-and-stick model of H-phase WS2 nanosheets (x = 0), shown in Fig. 3C, consistent with the hexagonal symmetry of the 2H phase, including an interplanar spacing (d(100) = 0.27 nm).
When x ≥ 0.1, the coexistence of both 2H and 1T′ phases is observed, as shown in Fig. 3D, indicating that Nb alloying induces the partial phase transition. The highlighted yellow region shows 2H and 1T′ phases with an enlarged HRTEM image on the left. The observed interplanar spacing of 0.27 nm for the (010) plane in 2H and the (100) plane in 1T′ supports the presence of mixed phase domains resulting from substitution of Nb at x = 0. Beyond x > 0.1, we observed severe lattice irregularities, with disrupted fringes and unclear periodicity in several regions, as shown in Fig. S9. Thus, it confirms that higher concentrations of x destabilize the pristine 2H lattice, promoting mixed phase and defect formation within the nanosheets. However, such irregularities are commonly associated with electrocatalytic activity, as they serve as active sites for electrocatalysis.
XPS analysis of NbxW1−xS2 shown in Fig. 4 reveals a distinct shift in binding energies, indicating changes in the electronic properties due to Nb incorporation. The deconvoluted spectra of W 4f and Nb 3d confirm the presence of different oxidation states, suggesting charge distribution when x > 0. A clear sign of composition tuning is shown in the survey scan (Fig. 4A), where the W 4f peak intensity decreases with increasing x, while the Nb 3d peak intensity increases. Valance band spectroscopy (VBS) of all the compositions reveals the valence band maximum (VBM) Fermi energy level (EF) as shown in Fig. 4B. The VBM appeared for pristine WS2 (≥0 eV) and (<0 eV) for all ternary compositions. As the Nb content increases, the downshift of the metal d-states relative to the Fermi level occurs, suggesting a decrease in the d-band center (εd).35 This indicates that the Nb content induces a semiconductor to metallic behaviour transition, which is further supported by the W 4f spectra analysis as discussed below.
Two characteristic peaks of W were observed (Fig. 4C) – W 4f7/2 at 32.3 eV and 4f5/2 at 34.5 eV. In WS2, the 4f7/2 peak at 32.3 eV (blue-shifted from neutral W at 31.2 eV) is attributed to the naturally occurring semiconductive 2H phase (W–S binding structures). However, the deconvolution of compositions with x ≥ 0.1 reveals two additional peaks at 31.8 eV and 33.9 eV, corresponding to the 1T′ phase, as already discussed in the HRTEM analysis above.36 The extra electrons introduced by Nb destabilize the pure semiconducting structure and initiate a 2H → 1T′ phase transition. The new peaks of the 1T′ phase show a decrease in binding energies as the Nb concentration increases. This could be observed owing to the shift in Fermi levels caused by increased density of d-orbital electrons. Similarly, the deconvolution of the Nb 3d5/2 peak shown in Fig. 4D indicates Nb3+, Nb4+, and Nb5+ states at 203.3, 204.1, and 206.1 eV respectively.
The variations in oxidation states of W and Nb (as shown in Fig. 4E and F), deconvoluted from the W 4f7/2 and Nb 3d5/2 peaks across all the composition, are presented. Despite phase coexistence, W remains entirely consistent in the +4 oxidation state. In contrast, Nb is present in Nb3+, Nb4+ and Nb5+ ion states. The Nb5+ state originates from Nb–O bonding and its fraction increases, suggesting electron depletion by W ions along with increased surface oxidation,37 whereas the Nb3+ and Nb4+ states originated from the Nb–S bonding structure. The reducing environment created by the decomposition of W(CO)6 helps stabilize these lower oxidation states, while restricting fully the formation of Nb oxide species at Nb5+ states.
Fig. 5A illustrates the composition dependence of the HER performance, with the maximum performance observed for the x = 0.5 sample. This composition activity is superior to that of the various previously reported modified TMD systems including those prepared based on doping, alloying, and heterostructure engineering, as summarized in Table S3. In support of the LSV data, the EIS data in Fig. 5C demonstrate a comparable composition-dependent behaviour, highlighting the pivotal role of charge transfer resistance (RCT) in determining performance. The fitted charge-transfer resistance (RCT) for the sample exhibiting the best HER performance (x = 0.5) is 157 Ω, whereas it is 1530 Ω for WS2. The results indicate that transfer kinetics are significantly improved in the (x = 0.5) sample. Long-term chronoamperometry (Fig. 5D and E) shows that, unlike the x = 0 sample, the x = 0.5 sample maintained stable current for nearly 100 h.
Substituting Nb, induces a semiconductor to semi metallic transition, as confirmed by the shift of the valence band maximum in the XPS. We observed increased HER performance for x = 0.5, highlighting the importance of optimizing Nb for improved HER activity. For x = 0.5, the Nb concentration likely enhanced the electrical conductivity, as confirmed by the EIS analysis and simultaneously increased the HER active sites. However, higher concentrations of Nb deteriorate the performance. This can be due to excessive structural distortion or defect formation that hinders electron transfer, increasing the overpotentials and slowing down the reaction kinetics. On the other hand, with increasing x, the formation of oxide species becomes more pronounced (evidence from XPS data supports the observation), which negatively impacts the electrocatalytic performance by increasing the charge transfer resistance and reducing the availability of H+ absorption sites. The results demonstrate that a carefully optimized ternary composition is crucial for achieving the best HER performance in acidic media, as balance between conductivity, structural distortions and active sites governs the overall catalytic efficiency.
Supplementary information (SI): materials and methods for the synthesis of nanostructures with additional data obtained from: (i) XRD analysis, (ii) ICP-OES analysis, (iii) STEM-EDX analysis, (iv) SEM – EDS spectral analysis for stoichiometric ratios, (v) HRTEM analysis – for lattice distortions or defect formation, and (vi) XPS spectral analysis. See DOI: https://doi.org/10.1039/d6nr00929h.
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