Open Access Article
Chunhui Du
*a,
Shuyao Lin
ab,
Nikola Koutná
ab and
Paul Heinz Mayrhofer
a
aInstitute of Material Science and Technology, TU Wien, Vienna, Austria. E-mail: chunhui.du@tuwien.ac.at
bDepartment of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, Sweden
First published on 10th June 2026
Transition metal diboride (TMB2) ceramics combine high hardness with excellent thermal and chemical stability, making them attractive for protective coating applications. TMB2s commonly grow as largely off-stoichiometric—containing vacancies or other simple crystallographic defects—and a particularly essential question is how such defects alter the response to mechanical loads at the nanoscale. We exploit molecular dynamics (MD) equipped with here-trained machine-learning interatomic potential (MLIP) to reveal effects of point and planar defects during nano-mechanical tests of TiB2, being a representative of the most common AlB2-type TMB2s. MLIP training consists of active learning on configurations from finite temperature ab initio molecular dynamics, including equilibrium and uniaxially loaded structures as well as various defective and/or extremely strained environments. Transferability to near-indenter-tip environments is achieved via on-the-fly training on extrapolative clusters from simple nanoindentation runs. Following MLIP's validation, we simulate room-temperature nanoindentation of TiB2−x structures, where B sub-stoichiommetry is realized by disordered B vacancies, single- and double-planar defects previously revealed by electron microscopy. A somewhat non-intuitive prediction is that TiB2−x structures can exhibit hardness comparable to the ideal TiB2, challenging traditional assumptions about weakening effects of sub-stoichiometry. This behavior is ascribed to Ti-rich planar defects, contrarily to vacancies which, at the same chemistry, notably deteriorate mechanical properties. We hypothesize that similar effects may be expected for other group 5–6 transition metal diborides.
4,5)—or via shear-induced transformations (e.g., TaB2 and WB2
6). TiB2 has been the most widely researched diboride, with hardness of 30–50 GPa and elastic modulus of 450–600 GPa.7–11 This significant spread of reported mechanical properties is seen not only in TiB2 but in many other diborides,12–14 reflecting various synthesis conditions which promote deviations from the ideal 1
:
2 TM-to-boron ratios.15,16 However, experimentally resolving the effects of individual defect types on mechanical response is highly challenging, owing to the difficulty of isolating specific defects (e.g., boron vacancies and planar defects12,17–20) and the limited control over synthesis conditions.21
Atomistic simulations, in principle, could shed light on the relationships between specific compositional defects and mechanical properties of TMB2s, guiding the synthesis, micromechanical testing, and electron microscopy investigations. Density functional theory (DFT) calculations have provided basic insights, including predictions of 0 K elastic constants.22 Length scales accessible to DFT, however, do not allow for modeling more complex defects (being typically restricted to simple point defects) and loading scenarios. In particular, simulations of nanoindentation—the state-of-the-art tool for hardness measurements in TiB2 and ceramic thin films in general—are unfeasible for DFT. A suitable avenue for such simulations is molecular dynamics (MD), with the main limitation being the availability of reliable interatomic potentials. Only few empirical interatomic potentials exist for transition metal nitride/boride based ceramics, such as embedded atom method (EAM) potential for Ti–Al–N,23 MEAM (modified EAM) potential for Ti–N system with various stoichiometry,24 and 2NN-MEAM (second nearest-neighbor MEAM) potential for Ti–B.25 The last mentioned has been used to predict nano-hardness of defect-free TiB2 as a function of temperature (T = 0–1500 K) via nanoindentation simulations yielding 70 GPa at 0 K and 65 GPa at 300 K (≈10–20% overestimated compared with experiment). The rapidly developing filed of machine learning interatomic potentials (MLIPs)—promising DFT-level of accuracy and computational efficiency of (semi-)empirical potentials—has boosted MD simulations which are now becoming feasible for more materials of practical relevance.26–28 Recently, several MLIP training strategies suitable for nano-scale mechanical simulations of ceramics have been proposed,29,30 providing a basis for our work. While showing promise for reliable predictions of deformation and fracture mechanisms as well as quantities such as theoretical tensile strength and fracture toughness,6 these strategies have only been applied to ideal defect-free structures and need to be further tested/extended for simulations including highly defective atomic environments.
According to experimental findings, mechanical properties of TiB2 thin films vary significantly with B stoichiometry. For instance, the hardness of DC magnetron sputtered TiB2−x films (with a B/Ti ratios 1.44–2.06) was reported to decrease from 43.9 GPa to 40.7 GPa, while the elastic modulus increased from 511 GPa to 541 GPa.15,31 Despite a substantial lack of boron, the hardness and Young's modulus are less affected. The mechanisms driving this phenomenon require detailed exploration. Based on the Ti–B phase diagram, some studies have treated TiB2 as a line compound,32 suggesting that under B-deficient conditions, the lack of B can be offset by formation of Ti-rich planar defects, locally alternating the crystalline structure and dislocation mobility. DFT calculated formation energy by Dahlqvist et al.22 suggested that B vacancies are energetically unfavorable, yielding ≈0.3 eV at−1 differences from the ideal stoichiometric TiB2 as B/Ti ratio vary from 1.5 to 2, whereas the formation of locally Ti-rich planar defects along the prismatic planes of TiB2−x lattices is energetically more favorable than the formation of vacancies. These indications have been supported by transmission electron microscopy (TEM) investigations on various synthesized TiB2−x thin films, showing that unpaired Ti atoms—resulting in B sub-stoichiometry—create planar defects on the prismatic plane of the TiB2.1,17
To elucidate how planar defects and randomly distributed boron vacancies impact the mechanical properties of boron-deficient TiB2−x systems, in this work, we predict room-temperature mechanical properties of single-crystal TiB2−x with various B contents realized via either point or planar defects, which were previously suggested to be largely present in magnetron-sputtered TiB2 coatings.17,18,33 Specifically, the elastic constants, hardness and indentation moduli are derived from nanoscale MD simulations of uniaxial tensile loading and nanoindentation. The underlying interatomic potential is machine-learned on various strained and/or defective ab initio bulk structures (active learning on configurations), up-fitted using highly extrapolative clusters representing environments near the indenter tip (on-the-fly training), and validated against ab initio calculations, and experimental data. The calculated mechanical properties as well as phenomena such as pop-in effects during nanoindentation align well with available experimental data. Further, the experimentally observed—and somewhat surprising—minor changes in hardness between the (nearly) ideal stoichiometric TiB2 and largely B-deficient TiB2−x, x ≈ 0.5, are attributed to Ti-rich planar defects. In a stark contrast, B vacancies cause much more significant hardness drop.
The model of various TiB2−x structures was based on a 720-atom (ideal α-TiB2, space group P6/mmm, Material ID:mp-1145)39 supercell, equilibrated at 300 K during simulations with the NpT (Isothermal–isobaric ensemble) ensemble (3 ps), followed by a simulation with the NVT (Canonical ensemble) ensemble (2.5 ps, using time-averaged lattice parameters from NpT).
To represent various off-stoichiometric environments, TiB2−x structures with (i) randomly-distributed B vacancies, and (ii) uniformly distributed Ti-rich planar defects were simulated (2-step NpT → NVT equilibration at 300 K, similar as for TiB2). For MLIP training, we included 50% and 25% vacancy concentrations in the point defect structures. Ti-rich planar defects were constructed based on previous experimental observations.17,18 Specifically, these defects were created by removing boron atoms located between selected single or double (10
0) prismatic Ti planes. These defect planes were oriented perpendicular to the [10
0] crystallographic direction and uniformly distributed across the models. To generate environments representing various mechanical loading conditions, surfaces, and voids, tensile strains (2–10%; 30% “shock” tension inducing cleavage) and compressive strains (2% to 10%) were applied to selected TiB2−x structures.
1. Generation of AIMD dataset (Fig. 1, Step 1). AIMD simulations (detailed in Sec. 2.1) were performed to generate a pool of ab initio configurations to be randomly split into the initial training set (TS0, 5%), the validation set (VS, 20%), and the learning set (LS, the rest ≈75%).
2. Active learning on AIMD configurations (Fig. 1, Step 2). The initial MLIP0 was trained on TS0 using an untrained 16-level MTP. Consequently, the MaxVol algorithm41,42 was employed to identify extrapolative configurations in the LS to be added to the TS based on their extrapolation grade (γ). In simple words, γ is the “uncertainty indicator” quantifying the degree to which an atomic configuration deviates from local environments in the training set. Higher γ indicates higher extrapolation into unfamiliar configuration space where energy (interatomic force, stress) predictions may no longer be reliable. From the definition (eqn (9) in ref. 42), γ ≤ 1 and γ > 1 imply MLIP's interpolation and extrapolation, respectively, and γthr = 2 has been previously used as accurate extrapolation.29,42,43 In this stage, a threshold γthr = 2 is set for active learning. The final MLIP produced in Step 2 exhibited γ ≤ 1 for the TS, γ < 2 for the LS but also the—independent, unseen—VS. Training and validation errors for energies and forces, as quantified by Root-Mean-Square-Error (RMSE), were below 6 meV per atom and 0.25 eV Å−1.
3. Preliminary nanoindentation simulations to identify extrapolative environments near the indenter tip (Fig. 1, Step 3). Using the MLIP from Step 2, we simulate nanoindentation tests (for computational details see Sec. 2.2.1) and output the per-atom γ value at each step. These allow identifying locally highly extrapolative environments (γ ≫ 10 in a spherical atomic region with a 9 Å radius). The clusters—embedded in a box with a 10 Å vacuum buffer—were labeled by ab initio energies and forces in additional DFT calculations (see Sec. 2.1).
4. MLIP refinement using extrapolative atomic clusters (Fig. 1, Step 4). Atomic clusters generated above were added to the TS and the MLIP was re-trained until no highly extrapolative environments (γ > 10) were present during MD nanoindentation test for both the ideal stoichiometric TiB2 as well as B-substoichiometric structures (on-the-fly training). MLIP's transferability to various TiB2−x structural variants (some of which were directly trained on already in Step 2) is further discussed in the Results section.
000-atom supercell (≈11 × 11 × 11 nm3). B-substoichiometric structures were considered via (i) randomly distributed B vacancies, or (ii) uniformly distributed planar defects, specifically, Ti-rich planar defects observed in experiment17,18 and visualized in Fig. 2. All structures were fully equilibrated at 300 K during a 10 ps NpT simulation.
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Fig. 2 Illustration of our B-deficient TiB2−x models. (a) The ideal stoichiometric TiB2, (b) TiB2−x, x = {0.2; 0.3; 0.4; 0.5}, with randomly distributed B vacancies also referred to as Vac; (c) TiB2−x, x = {0.67}, with single Ti-rich planar defect also referred to as SP; (d) TiB2−x, x = {0.67}, with double Ti-rich planar defect also referred to as DP. The visualization is at the (10 0) plane (top row) and the basal (0001) plane (bottom row), respectively, generated using the program VESTA.47 | ||
0], and [
2
0] direction or along the (0001)[10
0] slip system, respectively. The strain rate was 0.5 m s−1 and the simulation was continued until fracture (tensile test) or lattice slip (shear test). Tensile tests considered Poisson's contraction (via the NpT ensemble orthogonal to the loading direction), while shear test were conducted at a constant volume. Stress/strain data from the elastic region (strain ≤4%) served to derive the second-order elastic constants, Cij. Based on Cijs, we evaluated elastic moduli (e.g., the bulk, Young's, and shear modulus) following standard formulas.48
2
0] and y‖[10
0] directions, while z‖[0001] was non-periodic: with lower and upper boundary being fixed and shrink-wrapped, respectively, to ensure that all atoms remain within the simulation box.
Prior to nanoindentation, the simulation box was equilibrated at the target temperature (T = 300 K for most simulations) for 10 ps using NpT ensemble, followed by a 2.5 ps simulation with in NVT ensemble with Nosé–Hoover thermostat. Nanoindentation was simulated in a displacement-controlled mode, by moving a virtual indenter (3.5 nm radius, force constant K = 10 eV Å−3) along the [0001] axis for 140 ps at loading speed of 15 m s−1, until reaching ≈20 Å indentation depth. The hardness was evaluated from the hardness result averaged at the indentation depth of (15 ± 0.5) Å, corresponding to approximately 15% of the film thickness, in order to minimize the influence of the infinitive hard substrate on the hardness measurement. After holding the indenter for 2 ps, unloading was simulated for another 100 ps.
The hardness, H, was evaluated following Oliver–Pharr method,21,49 i.e., from the relationship between the indentation load, P, and the projected contact area, A, during indentation process,
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In this work, Poisson's ratios for the investigated material systems were obtained from elastic constants, Cijs, calculations and are listed in Table 2.
Validation against an independent ab initio dataset—that contains ≈104 snapshots from finite-temperature AIMD simulations of TiB2−x featuring a wide range of point and planar defect types/concentrations/distributions as well as these structures under tensile, shear, or compressive loads—supports the credibility of our MLIP (Fig. 4). Fig. 4a depicts the histogram of total energies in the reference set, while the corresponding parity plot is given in Fig. 4b. The AIMD vs. MLIP-predicted energies fall at or near the x = y line (Fig. 4b), showing that the model closely reproduces ab initio values, as quantified also by statistical errors RMSE = 6 meV and R2 = 0.999. Additional comparison with the ab initio MD dataset (300 and 1200 K data) from our previous work29 yields RMSE and R2 values of 13 meV and 0.999, respectively.
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| Fig. 4 Validation of the here-trained MLIP against a reference finite-temperature ab initio dataset (≈104 configurations). (a) The total energy distribution in the reference set containing various defective and/or highly-strained TiB2−x configurations, as described in the Methods. The B off-stoichiometry is realized via randomly distributed vacancies or planar defects (Vac, SP, DP–see Fig. 2). (b) Linear correlation between the corresponding AIMD and MLIP-predicted energies (blue data points) together with values predicted for another reference dataset from ref. 29 containing snapshots from finite-temperature (300 and 1200 K) AIMD simulations of TiB2 subject to uniaxial tensile and shear loading until fracture or lattice slip. | ||
Furthermore, our MLIP accurately reproduces stress/strain curves and failure mechanisms derived from room-temperature tensile and shear tests for defect-free TiB2 in ref. 29, in particular, yielding accuracy in stresses of <1 GPa where slightly higher deviations from AIMD data may occur near the fracture point. To assess the MLIP's transferability beyond DFT accessible length scales and point/planar defect concentrations and configurations not directly trained on, we simulate room-temperature equilibration of TiB2 as well as newly generated TiB2−x structures (e.g., TiB1.6, TiB1.8), employing supercells with ≈11
000 atoms (i.e., beyond DFT accessible length scales). Comparison of the calculated lattice parameters (Table 1) with reference ab initio or experimental values shows excellent agreement. Specifically, the differences are 0.02 Å (0.6%) and 0.006 eV at−1 (0.07%) in terms of lattice parameters and energies, respectively. Importantly, the MLIP's extrapolation grade during all equilibrations remains within the reliable extrapolation regime (γ < 10 (ref. 29 and 51)).
| Structure | Defect type | Method | T | a | c |
|---|---|---|---|---|---|
| — | ab initio - MD | 300 | 3.037 | 3.218 | |
| MLIP-MD | 300 | 3.040 | 3.236 | ||
| DFT29 | 0 | 3.027 | 3.213 | ||
| TiB2 | DFT52 | 0 | 3.028 | 3.226 | |
| Experiment53 | 300 | 3.030 | 3.230 | ||
| Experiment54 | 300 | 3.030 | 3.240 | ||
| TiB1.8 | Vac | ab initio – MD | 300 | 3.048 | 3.183 |
| MLIP-MD | 300 | 3.049 | 3.197 | ||
| TiB1.7 | Vac | ab initio – MD | 300 | 3.055 | 3.155 |
| MLIP-MD | 300 | 3.054 | 3.179 | ||
| TiB1.6 | Vac | ab initio – MD | 300 | 3.058 | 3.139 |
| MLIP-MD | 300 | 3.056 | 3.154 | ||
| TiB1.5 | Vac | ab initio – MD | 300 | 3.059 | 3.137 |
| MLIP-MD | 300 | 3.061 | 3.132 | ||
| TiB1.33 | SP | ab initio – MD | 300 | 3.046 | 3.259 |
| MLIP-MD | 300 | 3.056 | 3.261 | ||
| TiB1.33 | DP | ab initio – MD | 300 | 3.034 | 3.236 |
| MLIP-MD | 300 | 3.055 | 3.251 |
Using the here-trained MLIP, we have additionally calculated 0 K formation energies, Ef, of representative non-stoichiometric TiB2−x structures (Fig. 2 and Fig. 5). The results indicate that all defects cost energy (ΔEf > 0 considering TiB2 as a reference state) and TiB2−x variants with disordered vacancies are significantly more expensive than their chemically equivalent counterparts containing single- or double-planar defects (SP, DP). These predictions are consistent with previous 0 K DFT indications22 and experimental (electron microscopy) findings.17,18 The defects considered here are those frequently mentioned in experimental investigations of diborides. While there are other ways to realize B substoichiometry—such as Ti substitutional defects, Ti interstitials, or planar defects at different planes—none of those has been evidenced in experiment is therefore excluded from our models.
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| Fig. 5 Formation energy difference (ΔEf) between various B-substoichiometric TiB2−x (x = 0.2, 0.3, 0.4, 0.5, 0.66) structures calculated at 0 K using the here-trained MLIP. Defects are categorized as vacancies (green square), planar defects (SP: blue cross, DP: yellow cross), as schematically depicted in Fig. 2. Note that the MLIP-predicted Ef values differ from own reference DFT calculations by less than 0.01 eV at−1, underpinning the credibility of our force field. | ||
In what follows we present MD simulations—particularly nanoindentation tests for various off-stoichiometric TiB2−x systems—that are beyond length scales accessible to ab initio calculations. Their reliability is inferred from (i) the previously presented MLIP's validation against ab initio data, and (ii) MLIP's extrapolation grades, γ (see the Methods), monitored during some of these simulations. Importantly, γ values indicate reliable extrapolation (γ < 10) even under far-from-equilibrium conditions characterized by high stresses, local distortions, Ti/B intermixing, and crack nucleation beneath the indenter tip. MLIP's reliability at the nanoscale is further supported by comparing the calculated material's properties, such as elastic constants and hardness, with reference DFT or experimental data (see following sections).
000–150
000 atoms, under fully periodic boundary conditions. Prior to deformation, all structures are fully relaxed, exhibiting excellent thermal stability. In particular, no B diffusion is observed even for largely off-stoichiometric models (e.g. TiB1.6), mirroring the intrinsic structural stability of the α phase which imposes high energy barrier for vacancy migration and diffusion. According to the Arrhenius relationship, this results in diffusion at 300 K unlikely, making macroscopic observation virtually impossible.55–57
The linearly-elastic part of stress/strain curves (Fig. S1 in SI) serves to derive second-order elastic constants, Cij, and related mechanical properties (Table 2, Fig. 6). Furthermore, global stress maxima in the stress/strain data are used as estimates of the theoretical tensile and shear strength (Table S1 in SI) following ref. 58 and 59.
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Fig. 6 Room-temperature directional Young's moduli, polycrystalline Young's modulus, bulk modulus and shear modulus of the ideal TiB2 as well as of various B-substoichiometric TiB2−x structures derived using the here-trained MLIP. (a) in-plane Young's modulus E[ 0 0] = E[ 2 0]; (b) out-of-plane Young's modulus E[0001]; (c) bulk modulus, B; (d) Young's modulus, E; and (e) shear modulus, G were obtained from the elastic constants, Cij. The B deficiency in TiB2−x was realized by uniformly distributed single- or double-planar defects (SP: blue data points, DP: orange data points), or disordered vacancies (Vac: green data points), as schematically depicted in Fig. 2. The dashed horizontal line marks the ideal TiB2. For the underlying elastic constants and numerical values of the elastic moduli, see Table 2. | ||
| Models | Defect type | T | C11 | C12 | C13 | C33 | C44 | B | G | E | ν |
|---|---|---|---|---|---|---|---|---|---|---|---|
| TiB1.5 | SP | 300 | 461 | 86 | 100 | 336 | 156 | 206 | 165 | 392 | 0.183 |
| DP | 466 | 78 | 98 | 371 | 183 | 205 | 179 | 417 | 0.161 | ||
| Vac | 319 | 73 | 85 | 291 | 113 | 157 | 115 | 278 | 0.206 | ||
| TiB1.6 | SP | 300 | 478 | 83 | 94 | 381 | 217 | 208 | 195 | 447 | 0.142 |
| DP | 478 | 74 | 89 | 377 | 204 | 203 | 193 | 440 | 0.140 | ||
| Vac | 357 | 70 | 78 | 319 | 143 | 165 | 139 | 326 | 0.171 | ||
| TiB1.7 | SP | 300 | 503 | 86 | 103 | 397 | 224 | 220 | 204 | 467 | 0.146 |
| DP | 497 | 79 | 101 | 392 | 205 | 216 | 196 | 452 | 0.151 | ||
| Vac | 395 | 79 | 92 | 334 | 162 | 184 | 153 | 361 | 0.174 | ||
| TiB1.8 | SP | 300 | 510 | 84 | 92 | 401 | 236 | 216 | 212 | 480 | 0.131 |
| DP | 506 | 67 | 90 | 397 | 225 | 211 | 210 | 473 | 0.126 | ||
| Vac | 434 | 76 | 83 | 366 | 191 | 191 | 177 | 406 | 0.145 | ||
| TiB2 | — | 300 | 542 | 89 | 105 | 421 | 246 | 233 | 222 | 505 | 0.138 |
TiB2 48 |
— | 0 | 670 | 64 | 101 | 473 | 267 | 263 | 269 | 601 | 0.119 |
TiB2 29 |
— | 300 | 588 | 85 | 98 | 409 | 261 | 236 | 246 | 554 | 0.113 |
TiB2 60 |
— | 300 | 654 | 56 | 98 | 454 | 263 | 250 | 262 | 583 | 0.111 |
Fig. 6 underscore the strong influence of the B content on TiB2's mechanical properties already in the linearly-elastic regime. Specifically, the in-plane Young's modulus, E[
2
0] (Fig. 6a), decreases from 507 GPa to 426 GPa (16% decrease) when going from TiB2 to TiB1.5, where the latter contains planar defects (SP, DP). Due to the prismatic plane isotropy, differences between E[
2
0] and E[10
0] are negligible. The out-of-plane Young's modulus, E[0001] (Fig. 6b), drops from 386 GPa (TiB2) down to 330 GPa (TiB1.5, 15% decrease) with planar defects. While the B-sub-stoichiometry-mediated decrease in directional Young's moduli is slightly more pronounced for single planar defects (SP), the differences from double planar defects (DP) remain rather small (<10 GPa). Compared with planar defects, the directional Young's modulus of TiB2−x containing disordered vacancies (Vac) is significantly lower. Trends in the polycrystalline B, G, and E (Fig. 6c–e) follow these observed for the directional Young's modulus, in particular, decrease as the B sub-lattice becomes less populated. This decrease is the least pronounced for the bulk modulus.
The polycrystalline Poisson's ratio (ν, shown in Table 2) increases from 0.14 (TiB2) up to 0.16–0.2 (TiB1.5 with planar defects or vacancies), indicating an improved ability to redistribute stresses via plastic deformation, as discussed later in relation to the results obtained from nanoindentation simulation. A Poisson's ratio (ν) of 0.25 has been previously assumed when deriving nanoindentation hardness in experimental studies.61 This may, however, not accurately reflect the actual TiB2‘s stoichiometry, causing discrepancies in the literature. When deriving Young's modulus from our later presented nanoindentation tests, we therefore use Poisson's ratios representing the correct stoichiometry and defect type (i.e., SP, DP, or Vac). Using a constant ν = 0.25, the values would change by up to 5%.
Furthermore, Fig. 7 depicts trends in the ideal strengths, σhkil, of TiB2−x, derived from the maximum stress withstood during our room-temperature uniaxial tensile simulations. Irrespective of the defect type (SP, DP, Vac), our predictions reveal σ[10
0] < σ[0001] < σ[
2
0], suggesting that the basal plane isotropy does not extend beyond linearly-elastic regime. For the corresponding fracture strains, εF[hkil], we predict εF[10
0] < εF[
2
0] < εF[0001]. Although theoretical tensile strengths generally diminish with decreasing the B content, the trends seem more conspicuous than those derived from elastic constants. In particular, TiB1.7 with single planar defects exhibits the second highest strengths—after the ideal stoichiometric TiB2—followed by TiB1.7 with double planar defects, which, however is notably below, by >20%. Increasing the fraction of double planar defects, tensile strength of TiB1.5 remains essentially unchanged compared with TiB1.7, while increasing the fraction of single planar defects, TiB1.5, yields the overall lowest strength.
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Fig. 7 Theoretical tensile strength (and the corresponding fracture strain) of the ideal TiB2 as well as of various B-substoichiometric TiB2−x structures derived using the here-trained MLIP. (a), (b) and (c) depict the tensile strength (σmax; triangle data points, left y-axis) and fracture strain (σmax; square data points, right y-axis) along the [0001], [10 0] and [ 2 0] crystallographic directions, respectively. The B deficiency in TiB2−x was realized by uniformly distributed single- or double-planar defects (SP, DP), or disordered vacancies (Vac), as schematically depicted in Fig. 2. The σmax values of SP, DP, Vac are shown in blue, orange and green lines, respectively. The εmax of SP, DP and Vac are shown in cyan, magenta and brown lines, respectively. The structure snapshots (color code based on the volumetric strain) show TiB1.8 with SP near the fracture point, illustrating the fracture pattern. These general fracture patterns are similar for other stoichiometries and defect types. | ||
The results in Fig. 7 also suggest that both types of planar defects deteriorate tensile strength parallel to the Ti-rich defect region. Analysis of [10
0] tensile tests reveals cleavage along the entire Ti-rich plane (structure snapshots in Fig. 7). Possible explanation is that the Ti–Ti bond strength within the Ti-rich region, perpendicular to the planar defect, is weaker than the intact hexagonal structure with not only Ti–Ti bonds but also Ti–B bonds, in stoichiometric TiB2. This differences in distribution of mechanical properties throughout the simulation box increases stress concentration at the Ti-rich plane, causing cleavage fracture along these planes.
Furthermore, considering the typical orientation of diboride thin films—with (0001) planes perpendicular to the growth direction62—we simulate shearing along the (0001)[10
0] slip system. These are also representative of local stress states during nanoindentation. Fig. 8 presents the theoretical shear strength (together with the corresponding slip strain) derived as the maximum stress withstood by the material during shear deformation. The ideal TiB2 exhibits the highest shear strength but only an intermediate fracture strain compared with the B-deficient systems. Consistently with the shear modulus trends in Fig. 6, TiB2−x with disordered vacancies show a linear shear strength increase from ≈10 to 20 GPa. The correlation of the corresponding slip strain and B content, however, is rather weak. For single-planar defects, the shear strength initially increases with the B content, reaching a plateau for TiB1.7. The corresponding slip strain decreases significantly, as the B/Ti ratio decrease. For double-planar defects, the shear strength is the highest and remains stable despite stoichiometry changes, which can be attributed to a more favorable Ti–B bonding environment and improved p–d orbital hybridization, as shown in the SI (Fig. S3). The defective layers also help distribute the applied shear over a wider region, reducing local stress concentration. As a result, the reduction in slip strain is more moderate compared with the SP case.
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Fig. 8 Room-temperature shear strength of TiB2−x systems derived from (0001)[10 0] shear tests using the here-trained MLIP. (a) Shear strength and (b) the corresponding slip strain. Results for the ideal TiB2 and defective TiB2−x structures—single-planar defects, double-planar defects, and randomly distributed B vacancies (schematically depicted in Fig. 2)—are marked in blue, orange and green, respectively. The underlying values are shown in Table S1 in SI. | ||
Overall, simulations of tensile and shear tests indicate that the mechanical properties of TiB2−x are controlled by both the B content and the underlying defect type. In some experimental observations, however, sub-stoichiometric TiB2−x thin films—somewhat surprisingly—were reported to possess hardness as high as the stoichiometric TiB2.31,33 To further investigate this discrepancy, nanoindentation simulations are carried out in the following section.
Fig. 9 presents the obtained load-depth or load–displacement (L–D) curves for the ideal TiB2 as well as its defective TiB2−x counterparts, represented by TiB1.5, in which the B-sub-stoichiometry is realized by planar defects (SP, DP) or B vacancies (Vac). Irrespective of the B content, pressing the indenter into the (0001) surface initially induces an elastic response. As the indentation depth (hc) increases, the reactive force on the indenter exhibits a small bump indicating the “pop-in” effect, hence hinting at the onset of plastic deformation via dislocation motion. These observations closely align with L–D curves obtained from lab-scale nanoindentation tests.64,65 The pop-in event observed in the load–displacement curve is primarily due to the sudden activation of specific slip planes (mainly basal and pyramidal planes) beneath the indenter tip.66 These “pop-in” effects seem to reflect the B vacancy distribution, in particular, are notable for structures containing planar defects—which can be viewed as highly ordered vacancy arrangement—but almost negligible for those with vacancies randomly distributed in the B network.
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| Fig. 9 Representative load–depth (L–D) curves derived from room-temperature nanoindentation simulations for TiB2 as well as various B-substoichiometric TiB2−x structures. These nanoscale simulations were carried out using the here-trained MLIP. The B deficiency in TiB2−x was realized by uniformly distributed single- or double-planar defects (SP: orange data points, DP: blue data points), or disordered vacancies (Vac: green data points), as schematically depicted in Fig. 2. | ||
The calculated L–D data was further used to determine the hardness, H, and Young's modulus, E (Fig. 10). With H = 65 GPa and E = 563 GPa, TiB2 ranks as the second highest and the highest in terms of H and E, respectively, which is ≈10–20% overestimated with respect to experiment. Such discrepancy can be ascribed to the fact that real samples are never perfectly pure and ideally defect-free. Besides simple point and planar defects considered in our work, H(E) measurements are influenced by other macroscopic features like grain boundaries, micro-cracks as well as porosity arising from various deposition conditions. As previously shown67–71 the yield strength, thus hardness of ceramics, is dependent on the grain size following the Hall–Petch relationship. Quantitative assessment of these effects for TiB2, however, is outside of our scope.
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| Fig. 10 The hardness (a) and Young's modulus (b) derived from room-temperature nanoindentation simulations using the here-trained MLIP. The results for TiB2 (the dashed horizontal line) are compared with various B-substoichiometric TiB2−x structures. The SP and DP refer to single and double-planar defects, respectively, as schematically depicted in Fig. 2. | ||
While both the predicted H and E decrease upon decreasing the B content, i.e., by introducing more defects, there is an apparent difference between effects of B vacancies and planar defects, where the former cause a more dramatic hardness and Young's modulus deterioration. For structures with B vacancies, H and E decrease steadily by 49% and 40%, respectively, when the Ti-to-B ratio changes as 1
:
2 → 1
:
1.5, i.e., when 25% of the B sub-lattice becomes unpopulated. The H and E decrease in TiB2−x with planar defects occurs at a significantly slower rate. In the presence of single-planar defects, H = 59–62 GPa (TiB1.5 → TiB1.8), which is only a 10% to 5% decrease compared with the ideal TiB2, thus, the effect of decreasing the B content massively—down to TiB1.5 —causes only minimal H changes. For TiB2−x with double-planar defects, H = 66 GPa of TiB1.7 even slightly exceeds that of the defect-free TiB2.
Our simulations (Fig. 10b) further indicate that the Young's modulus E = 563 GPa of TiB2 decreases to 338 GPa (B vacancies) or 472 GPa (SP) or 422 GPa (DP) for the TiB1.5 stoichiometry. The differences between SP and DP defects are generally minor, especially compared with the significant E decrease in vacancy-containing TiB2−x structures. Note that B vacancies are more detrimental not only to TiB2's mechanical performance but also its energetic stability, as suggested by us as well as by previous DFT formation energy calculations.22 These simulations help to understand recent experimental findings33 demonstrating that the hardness of TiB2−x thin films deposited via Direct Current Magnetron Sputtering (DCMS) is maintained or slightly enhanced upon reducing the B/Ti ratio from 2.12 to 1.46, whereas the elastic modulus exhibits a noticeable decline. In particular, according to our predictions, the hardness remains nearly constant or undergoes a slight reduction as the B/Ti ratio decreases from 2 to 1.7 and eventually to 1.5. Conversely, the Young's modulus decreases significantly as the B/Ti ratio varies from 2 to 1.5, particularly in models with SP and DP defects.
To develop basic level of understanding why disordered B vacancies and Ti-rich planar defects trigger a distinct mechanical response, Fig. 11 shows the volumetric shear strain distribution in the indented models in which the indenter is pressed fairly deep in the sample (indentation depth ≈2 nm). The analysis indicates qualitatively different stress redistribution due to the presence of planar defects compared with disordered B vacancies as well as the ideal TiB2. In particular, TiB2−x structure with B vacancies reveals highly concentrated shear strain below the indenter tip and fewer slip events, in contrast to the defect-free TiB2 as well as TiB2−x featuring Ti-rich planar defects. This may diminish the occurrence of “pop-in” effects in models with B vacancies. Unlike that, TiB2−x with planar defects (both SP and DP) restricts lattice slip between several planar defects beneath the indentation zone. These indications are consistent with Thörnberg et al.,31 suggesting that Ti-rich planar defects act as barriers to dislocation glide, contributing to anisotropic deformation behavior and high hardness.
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| Fig. 11 Atomic shear strain distribution at the final stage of nanoindentation tests simulated with the here-trained MLIP. (a) Stoichiometric TiB2, (b–d) off-stoichiometric TiB1.8 with disordered vacancies (b), single planar defects (c), and double planar defects (d), as schematically depicted in Fig. 2. The color code is mapped using the atomic strain analysis function in OVITO.46 The supercell slice has thickness of ≈1 nm, oriented perpendicular to the prismatic plane. The tripod in color (top right) indicates crystallographic directions. | ||
Main conclusions of this work are summarized below:
1. Our MLIP accurately reproduced finite-temperature ab initio energies of AlB2-type TiB2−x structures with point or planar defect types and contents not directly trained on (RMSEmax ≈ 6 meV at−1). Further, it showed good agreement with ab initio and—where applicable—experimental lattice parameters (±0.02%) and second-order elastic constants (±10%), as well as reliable extrapolation grades during mechanical tests at both AIMD length scales (uniaxial tensile or shear simulations under fully periodic boundary conditions) and beyond (nanoindentation).
2. Room-temperature tensile tests for supercells with ≈140
000 atoms, uni-axially loaded along [0001], [
2
0], or [10
0] direction, ascribed the highest theoretical strength (54.5 GPa) to the stoichiometric TiB2. In B-sub-stoichiometric structures, the strength gradually reduced by 57%, 53% and 28% in case of vacancies, single-planar defects and double-planar defects, respectively, as B content decreased from the ideal TiB2 to TiB1.5. Notably, the most significant reduction occurred in the direction normal to the planar defect, associated with brittle cleavage perpendicular to Ti-rich (10
0) planes. For the shear test along the (0001)[10
0] slip system, the perfect TiB2 model exhibited the highest shear strength but only an intermediate slip strain compared with all other tested models.
3. Room-temperature nanoindentation tests—considering commonly reported [0001]-oriented samples—showed a significant hardness and modulus decrease for TiB2−x with disordered B vacancies: by 48% and 37%, respectively, for TiB1.5, as compared with the ideal TiB2. Contrarily, the H decrease for TiB2−x with Ti-rich planar defects was way less dramatic, about 8%, for TiB1.5 with single-planar defects. TiB1.7 with double-planar defects exhibited H = 66 GPa even slightly above H = 65 GPa of the ideal TiB2. The predicted H values were generally 10%–20% above experimental data, as our models only account for one defect type. Further, structural analysis suggested that planar defects serve as barriers impeding the dislocation glide or slip beneath the indentation region, thereby contributing to the increased H or preventing a rapid H decrease.
Our study indicated that MLIPs transferable to complex stress states near indenter tips require on-the-fly training, additionally to training on bulk and surface structures from ab initio MD. The here-proposed training strategy can be straightforwardly applied to other AlB2-type diborides and is likely suitable also for transition metal carbides and nitrides (typically crystallizing with different, cubic, crystal symmetry). Further, the wide spread of H data and the fact that largely B-substoichiometric compositions—though less energetically favorable compared with the fully occupied lattice—can even exceed H of the ideal TiB2 was explained by different mechanical response of TiB2−x with B vacancies and Ti-rich planar defects. We hypothesize that similar H trends and non-stoichiometry driven deformations mechanisms can be found in diborides energetically favoring the AlB2 structure, particularly ZrB2 and HfB2 isoelectronic to TiB2.
All in all, the unique capability of atomistic simulations to evaluate effects of individual defect types, for desired chemical compositions, under well defined and comparable loading conditions, was demonstrated. Challenges for follow-up research include modeling more complex (combinations of) defects, such as grain boundaries or amorphous B-rich tissue phase frequently reported in diborides. Following our MLIP training and MD simulation routine, a fundamentally interesting question is whether TM-rich planar defects have similar effects in other TMB2s and can be used in rational structural design.
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