An ultrafast self-powered semi-transparent pyro-phototronic device array based on room-temperature amorphous In2S3/NiO heterostructures

Abstract

We report a room-temperature-fabricated, self-powered, semi-transparent pyro-phototronic device array based on amorphous In₂S₃/NiO heterostructures. The amorphous In₂S₃ layer, confirmed by XRD, enables a transparent device with ∼36% visible transmittance, suitable for wearable and transparent electronics. Leveraging the pyroelectric effect at the In₂S₃/NiO interface and a transparent AgNW/ZnO electrode, the device exhibits ultrafast (<20 μs) photoresponse and responsivity up to 0.2 A W⁻¹ under 420 nm illumination without external bias. The AgNW/ZnO electrode enhances photocurrent stability and reproducibility. These results demonstrate a low-temperature, versatile heterostructure platform for next-generation transparent, self-powered optoelectronic and wearable photo-communication devices.