Polypyridinophane thin films via CVD for a polymeric dielectric layer on an oxide TFT with an ultrahigh dielectric constant

Abstract

High-k polymer gate dielectrics are desirable for oxide thin-film transistors but limited by low capacitance and interfacial instability. Pyridinophane-based polymers with main-chain heteroatoms were processed via a Gorham-type chemical vapor polymerization to form ultrathin, pinhole-free dielectrics with enhanced dielectric properties and reliable oxide transistor performance.