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DOI: 10.1039/D6MH90009G
(Correction)
Mater. Horiz., 2026, Advance Article
Correction: Highly-efficient and scalable TrioN (3N0C) synaptic cell for analog process-in-memory
Junyoung Choi,
Byoungwoo Lee,
Jinho Byun,
Hyejin Kim,
Seungkun Kim,
Junyong Lee,
Hyunjeong Kwak,
Jeonghoon Son and
Seyoung Kim*
Department of Materials Science and Engineering, Postech, Pohang, 37673, Republic of Korea. E-mail: kimseyoung@postech.ac.kr; Tel: +010 9797 0779
Received
15th January 2026
, Accepted 15th January 2026
First published on 23rd January 2026
Abstract
Correction for ‘Highly-efficient and scalable TrioN (3N0C) synaptic cell for analog process-in-memory’ by Junyoung Choi et al., Mater. Horiz., 2025, 12, 7509–7519, https://doi.org/10.1039/D5MH00324E.
The authors wish to clarify that in the Acknowledgements section of the published article, the project number quoted for the “National R&D Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT” should read “RS-2024-00405960” instead of “2410000283, RS-2024-00405960, 23008-45FC”.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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